VESD05A1B-HD1-GS08 Vishay, VESD05A1B-HD1-GS08 Datasheet - Page 2

• Manufacturer Part Number: VESD05A1B-HD1-GS08
• Description: DIODE ESD 1LINE 5V LLP1006-2L
• Manufacturer: Vishay

Specifications of VESD05A1B-HD1-GS08

• Voltage - Reverse Standoff (typ): 5V
• Voltage - Breakdown: 6V
• Power (watts): 33W
• Polarization: Unidirectional
• Mounting Type: Surface Mount
• Package / Case: 2-LLP
• Polarity: Bidirectional
• Channels: 1 Channel
• Clamping Voltage: 0.9 V
• Operating Voltage: 5 V (Min)
• Breakdown Voltage: 6 V
• Termination Style: SMD/SMT
• Peak Surge Current: 3.5 A
• Peak Pulse Power Dissipation: 33 W
• Capacitance: 25 pF
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Dimensions: 0.65(Max) mm W x 1.05(Max) mm L
• Reverse Stand-off Voltage Vrwm: 5V
• Breakdown Voltage Range: 6V To 7.5V
• Clamping Voltage Vc Max: 11V
• Diode Configuration: Bidirectional
• Diode Case Style: LLP1006-2L
• No. Of Pins: 2
• Esd Threat Voltage Max: 30kV
• Breakdown Voltage Vbr: 6.8V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 751-1452-2

VESD05A1B-HD1
Vishay Semiconductors
Note
• Ratings at 25 °C, ambient temperature unless otherwise specified
BIAS-MODE (BIDIRECTIONAL ASYMMETRICAL PROTECTION MODE)
With the VESD05A1B-HD1 one signal- or data-lines (L1) can be protected against voltage transients. With pin 1 connected to
ground and pin 2 connected to a signal- or data-line which has to be protected. As long as the voltage level on the data- or
signal-line is between 0 V (ground level) and the specified Maximum Reverse Working Voltage (V
between data line and ground offers a high isolation to the ground line. The protection device behaves like an open switch.
As soon as any positive transient voltage signal exceeds the break through voltage level of the protection diode, the diode
becomes conductive and shorts the transient current to ground. Now the protection device behaves like a closed switch. The
Clamping Voltage (V
(resistance and inductance) of the protection device.
Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the forward direction of
the protection diode. The low Forward Voltage (V
Due to the different clamping levels in forward and reverse direction the VESD05A1B-HD1 clamping behaviour is Bidirectional
and Asymmetrical (BiAs).
www.vishay.com
2
ELECTRICAL CHARACTERISTICS VESD05A1B-HD1 Bias mode (between pin 1 and pin 2)
PARAMETER
Protection paths
Reverse stand off voltage
Reverse current
Reverse breakdown voltage
Reverse clamping voltage
Forward clamping voltage
Capacitance
C
) is defined by the BReakthrough Voltage (V
L1
Ground
Number of lines which can be protected
TEST CONDITIONS/REMARKS
For technical questions, contact:
at V
at V
at I
at I
R
R
at I
at I
= 2.5 V; f = 1 MHz
at I
PP
PP
at I
at I
at V
= 0 V; f = 1 MHz
ESD-Protection Diode in
R
PP
= I
= I
R
PP
PP
= 0.1 μA
R
= 1 mA
F
PPM
= 0.2 A
PPM
= 5 V
= 1 A
= 1 A
) clamps the negative transient close to the ground level.
= 3 A
= 3 A
LLP1006-2L
[e-mail]
BR
) level plus the voltage drop at the series impedance
SYMBOL
V
N
V
RWM
C
C
V
V
V
V
V
lines
I
BR
R
C
C
F
F
F
D
D
MIN.
5
6
-
-
-
-
-
-
-
-
-
BiAs
TYP.
0.95
0.01
6.8
8.9
1.3
1.9
19
12
20925
8
-
-
RWM
Document Number: 81796
) the protection diode
MAX.
0.1
7.5
9.5
1.2
11
23
1
Rev. 1.4, 26-Oct-10
-
-
-
-
UNIT
lines
μA
pF
pF
V
V
V
V
V
V
V