DIODE ESD BUS 1LINE LLP1006-2L

 

VBUS051BD-HD1-GS08

Manufacturer Part NumberVBUS051BD-HD1-GS08
DescriptionDIODE ESD BUS 1LINE LLP1006-2L
ManufacturerVishay
VBUS051BD-HD1-GS08 datasheets

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Specifications of VBUS051BD-HD1-GS08

Voltage - Reverse Standoff (typ)5VVoltage - Breakdown6.9V
Power (watts)45WPolarizationUnidirectional
Mounting TypeSurface MountPackage / Case2-LLP
PolarityBidirectionalClamping Voltage16 V
Operating Voltage5 V (Min)Breakdown Voltage6.9 V
Peak Surge Current3 APeak Pulse Power Dissipation45 W
Capacitance0.9 pFMaximum Operating Temperature+ 125 C
Minimum Operating Temperature- 40 CDimensions0.65(Max) mm W x 1.05(Max) mm L x 0.4(Max) mm H
Reverse Stand-off Voltage Vrwm5VBreakdown Voltage Range6.9V To 8.7V
Clamping Voltage Vc Max16VDiode ConfigurationBidirectional
Diode Case StyleLLP1006-2LNo. Of Pins2
Esd Threat Voltage Max15kVBreakdown Voltage Vbr7.9V
Rohs CompliantYesLead Free Status / RoHS StatusLead free / RoHS Compliant
Other names751-1447-2  
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VBUS051BD-HD1
Vishay Semiconductors
APPLICATION NOTE
The VBUS051BD-HD1 is an ESD-protection device with the characteristic of a Z-diode with a high ESD-immunity and a very low
capacitance which makes it usable for high frequency applications like USB2.0 or HDMI.
With the VBUS051BD-HD1 one high speed data line can be protected against transient voltage signals like ESD (electro static
discharge). Connected to the data line (pin 2) and to ground (pin 1) negative transients will be clamped close below the ground
level while positive transients will be clamped close above the 5 V working range. The clamping behaviour of the
VBUS051BD-HD1 is bidirectional but asymmetrical (BiAs) and so it offers the best protection for applications running up to 5 V.
TYPICAL CHARACTERISTICS (T
120 %
Rise time = 0.7 ns to 1 ns
100 %
80 %
60 %
53 %
40 %
27 %
20 %
0 %
- 10 0 10 20 30 40 50 60 70 80 90 100
Time (ns)
20557
Fig. 1 - ESD Discharge Current Wave Form
acc. IEC 61000-4-2 (330 /150 pF)
8 µs to 100 %
100 %
80 %
60 %
20 µs to 50 %
40 %
20 %
0 %
0
10
20
20548
Time (µs)
Fig. 2 - 8/20 µs Peak Pulse Current Wave Form
acc. IEC 61000-4-5
www.vishay.com
For technical questions, contact:
2
Low Capacitance, Single-Line
ESD-Protection Diode
= 25 °C, unless otherwise specified)
amb
21421
Fig. 3 - Typical Capacitance C
30
40
Fig. 4 - Typical Forward Current I
ESDprotection@vishay.com
2.5
f = 1 MHz
2
1.5
1
0.5
0
0
1
2
3
4
5
V
(V)
R
vs. Reverse Voltage V
D
100
10
1
0.1
0.01
0.001
0.5
0.6
0.7
0.8
0.9
1
1.1
20880
V
(V)
F
vs. Forward Voltage V
F
Document Number: 81785
Rev. 1.9, 24-Feb-11
6
R
F