PESD5V0L2UU,115 NXP Semiconductors, PESD5V0L2UU,115 Datasheet

DIODE ESD PROT LOW UNIDIR SOT323

PESD5V0L2UU,115

Manufacturer Part Number
PESD5V0L2UU,115
Description
DIODE ESD PROT LOW UNIDIR SOT323
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PESD5V0L2UU,115

Package / Case
SC-70-3, SOT-323-3
Voltage - Reverse Standoff (typ)
5V
Voltage - Breakdown
5.8V
Power (watts)
70W
Polarization
2 Channel Array - Unidirectional
Mounting Type
Surface Mount
Polarity
Unidirectional
Channels
2 Channels
Clamping Voltage
13 V
Operating Voltage
5 V
Breakdown Voltage
6.2 V
Peak Surge Current
6.5 A
Peak Pulse Power Dissipation
70 W
Capacitance
38 pF
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Dimensions
1.35(Max) mm W x 2.2(Max) mm L
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-4808-2
934062747115

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PESD5V0L2UU,115
Manufacturer:
ON
Quantity:
21 660
1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
Low capacitance unidirectional double ElectroStatic Discharge (ESD) protection diodes
in a very small Surface-Mounted Device (SMD) plastic package designed to protect up to
two signal lines from the damage caused by ESD and other transients.
Table 1.
I
I
I
I
I
I
I
I
Table 2.
T
Type number
PESD5V0L2UU
PESD6V0L2UU
Symbol
V
amb
RWM
PESD5V0L2UU; PESD6V0L2UU
Low capacitance unidirectional ESD protection diodes
Rev. 01 — 11 March 2009
Unidirectional ESD protection of up to
two lines
Low diode capacitance: C
Max. peak pulse power: P
Low clamping voltage: V
Ultra low leakage current
Audio and video equipment
Computers and peripherals
Cellular handsets and accessories
= 25 C unless otherwise specified.
Parameter
reverse standoff voltage
Product overview
Quick reference data
PESD5V0L2UU
PESD6V0L2UU
CL
Package
NXP
SOT323
d
PP
= 13 V
= 34 pF
= 70 W
Conditions
I
I
I
I
I
I
I
JEITA
SC-70
ESD protection up to 30 kV
IEC 61000-4-2; level 4 (ESD)
IEC 61000-4-5 (surge); I
AEC-Q101 qualified
Communication systems
Portable electronics
Subscriber Identity Module (SIM) card
protection
Min
-
-
Package configuration
very small
Typ
-
-
Product data sheet
PP
Max
5.0
6.0
= 6.5 A
Unit
V
V

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PESD5V0L2UU,115 Summary of contents

Page 1

PESD5V0L2UU; PESD6V0L2UU Low capacitance unidirectional ESD protection diodes Rev. 01 — 11 March 2009 1. Product profile 1.1 General description Low capacitance unidirectional double ElectroStatic Discharge (ESD) protection diodes in a very small Surface-Mounted Device (SMD) plastic package designed to ...

Page 2

... NXP Semiconductors Table unless otherwise specified. amb Symbol C d [1] Bidirectional configuration: measured from pin pin [2] Unidirectional configuration: measured from pin pin Pinning information Table 3. Pin Ordering information Table 4. Type number PESD5V0L2UU PESD6V0L2UU 4. Marking Table 5. Type number PESD5V0L2UU PESD6V0L2UU ...

Page 3

... NXP Semiconductors 5. Limiting values Table 6. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Per diode amb T stg [1] Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5. [2] Measured from pin pin 3. Table unless otherwise specified. amb Symbol ...

Page 4

... NXP Semiconductors 120 100 % (%) Fig 1. 8/20 s pulse waveform according to IEC 61000-4-5 PESD5V0L2UU_PESD6V0L2UU_1 Product data sheet PESD5V0L2UU; PESD6V0L2UU Low capacitance unidirectional ESD protection diodes 001aaa630 Fig 2. Rev. 01 — 11 March 2009 I PP 100 % 0 ESD pulse waveform according to IEC 61000-4-2 © NXP B.V. 2009. All rights reserved. ...

Page 5

... NXP Semiconductors 6. Characteristics Table unless otherwise specified. amb Symbol V RWM dif [1] Bidirectional configuration: measured from pin pin [2] Unidirectional configuration: measured from pin pin [3] Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5. [4] Measured from pin pin 3. PESD5V0L2UU_PESD6V0L2UU_1 Product data sheet PESD5V0L2UU ...

Page 6

... NXP Semiconductors (pF) 30 ( MHz amb (1) unidirectional (2) bidirectional Fig 3. PESD5V0L2UU: Diode capacitance as a function of reverse voltage; typical values RWM + P-N Fig 5. V-I characteristics for a unidirectional ESD protection diode PESD5V0L2UU_PESD6V0L2UU_1 Product data sheet PESD5V0L2UU; PESD6V0L2UU Low capacitance unidirectional ESD protection diodes 006aab435 ...

Page 7

... NXP Semiconductors ESD TESTER IEC 61000-4-2 network C = 150 pF 330 Z Z GND unclamped +8 kV ESD pulse waveform (IEC 61000-4-2 network) GND unclamped 8 kV ESD pulse waveform (IEC 61000-4-2 network) Fig 7. PESD5V0L2UU: ESD clamping test setup and waveforms PESD5V0L2UU_PESD6V0L2UU_1 Product data sheet PESD5V0L2UU; PESD6V0L2UU ...

Page 8

... NXP Semiconductors 7. Application information PESD5V0L2UU and PESD6V0L2UU are designed for the protection two unidirectional data or signal lines, or for the protection of one bidirectional data or signal line, from the damage caused by ESD. For unidirectional protection, the devices may be used on lines where the signal polarities are positive with respect to ground, and for bidirectional protection, the devices may be used on lines where the signal polarities are both, positive and negative with respect to ground ...

Page 9

... NXP Semiconductors 8. Test information 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors , and is suitable for use in automotive applications. 9. Package outline Fig 9. 10. Packing information Table 10 ...

Page 10

... NXP Semiconductors 11. Soldering Fig 10. Reflow soldering footprint SOT323 (SC-70) 3.65 2.1 Fig 11. Wave soldering footprint SOT323 (SC-70) PESD5V0L2UU_PESD6V0L2UU_1 Product data sheet PESD5V0L2UU; PESD6V0L2UU Low capacitance unidirectional ESD protection diodes 2.65 1.85 1.325 2 0 4.6 2.575 1.425 (3 ) Rev. 01 — 11 March 2009 ...

Page 11

... NXP Semiconductors 12. Revision history Table 11. Revision history Document ID PESD5V0L2UU_PESD6V0L2UU_1 20090311 PESD5V0L2UU_PESD6V0L2UU_1 Product data sheet PESD5V0L2UU; PESD6V0L2UU Low capacitance unidirectional ESD protection diodes Release date Data sheet status Product data sheet Rev. 01 — 11 March 2009 Change notice Supersedes - - © NXP B.V. 2009. All rights reserved. ...

Page 12

... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 13

... NXP Semiconductors 15. Contents 1 Product profi 1.1 General description 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 7 Application information Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9 8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 9 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 10 Packing information Soldering ...

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