PESD5V0L2BT,215 NXP Semiconductors, PESD5V0L2BT,215 Datasheet
PESD5V0L2BT,215
Specifications of PESD5V0L2BT,215
934058864215
PESD5V0L2BT T/R
PESD5V0L2BT T/R
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PESD5V0L2BT,215 Summary of contents
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PESDxL2BT series Low capacitance double bidirectional ESD protection diodes in SOT23 Rev. 02 — 25 August 2009 1. Product profile 1.1 General description Low capacitance double bidirectional ElectroStatic Discharge (ESD) protection diodes in a SOT23 small Surface Mounted Device (SMD) ...
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... NXP Semiconductors 2. Pinning information Table 2. Pin Ordering information Table 3. Type number PESD3V3L2BT PESD5V0L2BT PESD12VL2BT PESD15VL2BT PESD24VL2BT 4. Marking Table 4. Type number PESD3V3L2BT PESD5V0L2BT PESD12VL2BT PESD15VL2BT PESD24VL2BT [ made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China PESDXL2BT_SER_2 Product data sheet Low capacitance double bidirectional ESD protection diodes in SOT23 ...
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... NXP Semiconductors 5. Limiting values Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol amb T stg [1] Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5. [2] Measured from pin Table 6. Symbol V ESD [1] Device stressed with ten non-repetitive ESD pulses. ...
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... NXP Semiconductors 120 100 % (%) Fig 1. 8/20 s pulse waveform according to IEC 61000-4-5 PESDXL2BT_SER_2 Product data sheet Low capacitance double bidirectional ESD protection diodes in SOT23 001aaa630 Fig 2. Rev. 02 — 25 August 2009 PESDxL2BT series I PP 100 % 0 ESD pulse waveform according to IEC 61000-4-2 © NXP B.V. 2009. All rights reserved. ...
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... NXP Semiconductors 6. Characteristics Table unless otherwise specified. amb Symbol V RWM PESDXL2BT_SER_2 Product data sheet Low capacitance double bidirectional ESD protection diodes in SOT23 Characteristics Parameter Conditions reverse standoff voltage PESD3V3L2BT PESD5V0L2BT PESD12VL2BT PESD15VL2BT PESD24VL2BT reverse leakage current PESD3V3L2BT V RWM PESD5V0L2BT V RWM ...
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... NXP Semiconductors Table unless otherwise specified. amb Symbol r dif [1] Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5. [2] Measured from pin PESDXL2BT_SER_2 Product data sheet Low capacitance double bidirectional ESD protection diodes in SOT23 Characteristics …continued Parameter Conditions differential resistance ...
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... NXP Semiconductors ( (1) ( amb (1) PESD3V3L2BT and PESD5V0L2BT (2) PESD12VL2BT, PESD15VL2BT, PESD24VL2BT Fig 3. Peak pulse power as a function of exponential pulse duration t ; typical values p 110 C d (pF) 100 MHz amb (1) PESD3V3L2BT (2) PESD5V0L2BT Fig 5. Diode capacitance as a function of reverse voltage; typical values PESDXL2BT_SER_2 Product data sheet Low capacitance double bidirectional ESD protection diodes in SOT23 ...
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... NXP Semiconductors RM( 100 50 0 (1) PESD3V3L2BT, PESD5V0L2BT PESD12VL2BT, PESD15VL2BT and PESD24VL2BT: I < 150 Fig 7. Relative variation of reverse leakage current as a function of junction temperature; typical values PESDXL2BT_SER_2 Product data sheet Low capacitance double bidirectional ESD protection diodes in SOT23 006aaa069 ( 100 150 Fig 8. ...
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... NXP Semiconductors ESD TESTER IEC 61000-4-2 network C = 150 pF 330 Z Z GND unclamped 1 kV ESD voltage waveform (IEC 61000-4-2 network) GND unclamped 1 kV ESD voltage waveform (IEC 61000-4-2 network) Fig 9. ESD clamping test setup and waveforms PESDXL2BT_SER_2 Product data sheet Low capacitance double bidirectional ESD protection diodes in SOT23 ...
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... NXP Semiconductors 7. Application information The PESDxL2BT series is designed for the protection of two bidirectional signal lines from the damage caused by ESD and surge pulses. The PESDxL2BT series may be used on lines where the signal polarities are above and below ground. The PESDxL2BT series provides a surge capability 350 W per line for an 8/20 s waveform ...
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... NXP Semiconductors 8. Package outline Fig 11. Package outline SOT23 (TO-236AB) 9. Packing information Table 9. The indicated -xxx are the last three digits of the 12NC ordering code. Type number PESD3V3L2BT PESD5V0L2BT PESD12VL2BT PESD15VL2BT PESD24VL2BT [1] For further information and the availability of packing methods, see PESDXL2BT_SER_2 ...
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... Table 10. Revision history Document ID Release date PESDXL2BT_SER_2 20090825 • Modifications: This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. • Table 2 PESDXL2BT_SER_1 20051101 PESDXL2BT_SER_2 ...
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... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...
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... NXP Semiconductors 13. Contents 1 Product profi 1.1 General description 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 7 Application information Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 9 Packing information Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 11 Legal information ...