PESD24VS1UL,315 NXP Semiconductors, PESD24VS1UL,315 Datasheet
PESD24VS1UL,315
Specifications of PESD24VS1UL,315
PESD24VS1UL T/R
PESD24VS1UL T/R
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PESD24VS1UL,315 Summary of contents
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PESDxS1UL series ESD protection diodes in a SOD882 package Rev. 02 — 20 August 2009 1. Product profile 1.1 General description Unidirectional ElectroStatic Discharge (ESD) protection diodes in a SOD882 leadless ultra small Surface Mounted Device (SMD) plastic package designed ...
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... NXP Semiconductors 2. Pinning information Table 2. Pin 1 2 [1] The marking bar indicates the cathode. 3. Ordering information Table 3. Type number PESD3V3S1UL PESD5V0S1UL PESD12VS1UL PESD15VS1UL PESD24VS1UL 4. Marking Table 4. Type number PESD3V3S1UL PESD5V0S1UL PESD12VS1UL PESD15VS1UL PESD24VS1UL PESDXS1UL_SER_2 Product data sheet Pinning Description cathode anode Ordering information ...
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... NXP Semiconductors 5. Limiting values Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol amb T stg [1] Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5. Table 6. Symbol V ESD [1] Device stressed with ten non-repetitive ESD pulses. Table 7. Standard IEC 61000-4-2; level 4 (ESD) HBM MIL-STD-883 ...
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... NXP Semiconductors 120 100 % (%) Fig 1. 8/20 s pulse waveform according to IEC 61000-4-5 6. Characteristics Table unless otherwise specified amb Symbol V RWM PESDXS1UL_SER_2 Product data sheet 001aaa630 Fig 2. Characteristics Parameter Conditions reverse stand-off voltage PESD3V3S1UL PESD5V0S1UL PESD12VS1UL PESD15VS1UL PESD24VS1UL reverse leakage current PESD3V3S1UL ...
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... NXP Semiconductors Table unless otherwise specified amb Symbol dif [1] Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5. PESDXS1UL_SER_2 Product data sheet Characteristics …continued Parameter Conditions diode capacitance MHz; V PESD3V3S1UL PESD5V0S1UL PESD12VS1UL PESD15VS1UL PESD24VS1UL clamping voltage PESD3V3S1UL PESD5V0S1UL PESD12VS1UL ...
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... NXP Semiconductors ( amb Fig 3. Peak pulse power as a function of exponential pulse duration; typical values 240 C d (pF) 200 160 (1) 120 ( MHz amb (1) PESD3V3S1UL 3.3 V RWM (2) PESD5V0S1UL 5.0 V RWM Fig 5. Diode capacitance as a function of reverse voltage; typical values PESDXS1UL_SER_2 Product data sheet 001aaa726 ...
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... NXP Semiconductors RM( 100 50 0 (1) PESD3V3S1UL 3.3 V RWM (2) PESD5V0S1UL 5.0 V RWM I is less than 150 C for: R PESD12VS1UL RWM PESD15VS1UL RWM PESD24VS1UL RWM Fig 7. Relative variation of reverse leakage current as a function of junction temperature; typical values PESDXS1UL_SER_2 Product data sheet 001aaa729 (1) (2) 50 100 150 ...
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... NXP Semiconductors ESD TESTER note 1 Note 1: IEC 61000-4-2 network C = 150 pF 330 s d vertical scale = 200 V/div horizontal scale = 50 ns/div GND unclamped 1 kV ESD voltage waveform (IEC 61000-4-2 network) GND vertical scale = 200 V/div horizontal scale = 50 ns/div unclamped 1 kV ESD voltage waveform (IEC 61000-4-2 network) Fig 9 ...
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... NXP Semiconductors 7. Application information The PESDxS1UL series is designed for protection of one unidirectional data line from the damage caused by ESD and surge pulses. The PESDxS1UL series may be used on lines where the signal polarities are either positive or negative with respect to ground. The PESDxS1UL series provides a surge capability of 150 W for an 8/20 s waveform. ...
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... NXP Semiconductors 8. Package outline Fig 11. Package outline SOD882 9. Packing information Table 9. The indicated -xxx are the last three digits of the 12NC ordering code. Type number PESD3V3S1UL PESD5V0S1UL PESD12VS1UL PESD15VS1UL PESD24VS1UL [1] For further information and the availability of packing methods, see PESDXS1UL_SER_2 Product data sheet ...
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... Revision history Document ID Release date PESDXS1UL_SER_2 20090820 • Modifications: This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. PESDXS1UL_SER_1 20060331 PESDXS1UL_SER_2 Product data sheet ...
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... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...
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... NXP Semiconductors 13. Contents 1 Product profi 1.1 General description 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 7 Application information Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 9 Packing information Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 11 Legal information ...