PESD3V3L4UF,115 NXP Semiconductors, PESD3V3L4UF,115 Datasheet - Page 16

• Manufacturer Part Number: PESD3V3L4UF,115
• Description: DIODE QUAD ESD PROTECTION 6-XSON
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PESD3V3L4UF,115

• Package / Case: 6-XSON (Micropak™), SOT-886
• Voltage - Reverse Standoff (typ): 3.3V
• Voltage - Breakdown: 5.32V
• Power (watts): 30W
• Polarization: 4 Channel Array - Unidirectional
• Mounting Type: Surface Mount
• Polarity: Unidirectional
• Clamping Voltage: 12 V
• Operating Voltage: 3.3 V
• Breakdown Voltage: 5.6 V
• Termination Style: SMD/SMT
• Peak Surge Current: 3 A
• Peak Pulse Power Dissipation: 30 W
• Capacitance: 22 pF
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Dimensions: 1.05 mm W x 1.5 mm L x 0.5 mm H
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934061194115; PESD3V3L4UF T/R; PESD3V3L4UF T/R

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PESDXL4UF_G_W_4
Product data sheet
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Low capacitance unidirectional quadruple ESD protection diode arrays
http://www.nxp.com
Definition
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Rev. 04 — 28 February 2008
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