ESD9R3.3ST5G ON Semiconductor, ESD9R3.3ST5G Datasheet
ESD9R3.3ST5G
Specifications of ESD9R3.3ST5G
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ESD9R3.3ST5G Summary of contents
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... FR−5 = 1.0 x 0.75 x 0.62 in. See Application Note AND8308/D for further description of survivability specs. © Semiconductor Components Industries, LLC, 2008 July, 2008 − Rev. 0 260°C ESD9R3.3ST5G Symbol Value Unit †For information on tape and reel specifications, including part orientation and tape sizes, please ± ...
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... Application Note AND8308/D for detailed explanations of datasheet parameters. ELECTRICAL CHARACTERISTICS V RWM (V) Device Marking Max Device ESD9R3.3ST5G J* 3.3 *Rotated 270° measured with a pulse test current For test procedure see Figures 3 and 4 and Application Note AND8307/D. 4. Limits over temperature are guaranteed by design, not production tested measured using pulse waveform in Figure 5 ...
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... ON Semiconductor has developed a way to examine the entire voltage waveform across the ESD protection diode over the time domain of an ESD pulse in the form of an oscilloscope screenshot, which can be found on the datasheets for all ESD protection diodes ...
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... H E *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...