DSPIC30F3013-30I/SO Microchip Technology, DSPIC30F3013-30I/SO Datasheet - Page 51

IC DSPIC MCU/DSP 24K 28SOIC

DSPIC30F3013-30I/SO

Manufacturer Part Number
DSPIC30F3013-30I/SO
Description
IC DSPIC MCU/DSP 24K 28SOIC
Manufacturer
Microchip Technology
Series
dsPIC™ 30Fr

Specifications of DSPIC30F3013-30I/SO

Program Memory Type
FLASH
Program Memory Size
24KB (8K x 24)
Package / Case
28-SOIC (7.5mm Width)
Core Processor
dsPIC
Core Size
16-Bit
Speed
30 MIPs
Connectivity
I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
20
Eeprom Size
1K x 8
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
2.5 V ~ 5.5 V
Data Converters
A/D 10x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Product
DSCs
Data Bus Width
16 bit
Processor Series
DSPIC30F
Core
dsPIC
Maximum Clock Frequency
30 MHz
Number Of Programmable I/os
30
Data Ram Size
2 KB
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
52713-733, 52714-737, 53276-922, EWDSPIC
Development Tools By Supplier
PG164130, DV164035, DV244005, DV164005, PG164120, ICE4000, DM240002, DM300018, DM330011
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
XLT28SO-1 - SOCKET TRANSITION 28SOIC 300MILDV164005 - KIT ICD2 SIMPLE SUIT W/USB CABLE
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
DSPIC30F301330ISO

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DSPIC30F3013-30I/SO
Manufacturer:
NSC
Quantity:
340
Part Number:
DSPIC30F3013-30I/SO
Manufacturer:
PIC
Quantity:
20 000
5.6
A complete programming sequence is necessary for
programming or erasing the internal Flash in RTSP
mode. A programming operation is nominally 2 msec in
duration and the processor stalls (waits) until the
operation
(NVMCON<15>) starts the operation and the WR bit is
automatically cleared when the operation is finished.
5.6.1
The user can erase or program one row of program
Flash memory at a time. The general process is:
1.
2.
3.
EXAMPLE 5-1:
© 2010 Microchip Technology Inc.
; Setup NVMCON for erase operation, multi word write
; program memory selected, and writes enabled
; Init pointer to row to be ERASED
Read one row of program Flash (32 instruction
words) and store into data RAM as a data
“image”.
Update the data image with the desired new
data.
Erase program Flash row.
a)
b)
c)
d)
e)
f)
g)
Programming Operations
Set up NVMCON register for multi-word,
program Flash, erase, and set WREN bit.
Write address of row to be erased into
NVMADRU/NVMDR.
Write 0x55 to NVMKEY.
Write 0xAA to NVMKEY.
Set the WR bit. This begins erase cycle.
CPU stalls for the duration of the erase cycle.
The WR bit is cleared when erase cycle
ends.
MOV
MOV
MOV
MOV
MOV
MOV
DISI
MOV
MOV
MOV
MOV
BSET
NOP
NOP
PROGRAMMING ALGORITHM FOR
PROGRAM FLASH
is
finished.
#0x4041,W0
W0
#tblpage(PROG_ADDR),W0
W0
#tbloffset(PROG_ADDR),W0
W0, NVMADR
#5
#0x55,W0
W0
#0xAA,W1
W1
NVMCON,#WR
,
,
,
,
ERASING A ROW OF PROGRAM MEMORY
NVMCON
NVMADRU
NVMKEY
NVMKEY
Setting
the
dsPIC30F2011/2012/3012/3013
WR
bit
;
; Init NVMCON SFR
;
; Initialize PM Page Boundary SFR
; Intialize in-page EA[15:0] pointer
; Initialize NVMADR SFR
; Block all interrupts with priority <7 for
; next 5 instructions
; Write the 0x55 key
;
; Write the 0xAA key
; Start the erase sequence
; Insert two NOPs after the erase
; command is asserted
4.
5.
6.
5.6.2
Example 5-1
to erase a row (32 instructions) of program memory.
Write 32 instruction words of data from data
RAM “image” into the program Flash write
latches.
Program 32 instruction words into program
Flash.
a)
b)
c)
d)
e)
f)
Repeat steps 1 through 5 as needed to program
desired amount of program Flash memory.
Set up NVMCON register for multi-word,
program Flash, program, and set WREN
bit.
Write 0x55 to NVMKEY.
Write 0xAA to NVMKEY.
Set the WR bit. This begins program cycle.
CPU stalls for duration of the program cycle.
The WR bit is cleared by the hardware
when program cycle ends.
ERASING A ROW OF PROGRAM
MEMORY
shows a code sequence that can be used
DS70139G-page 51

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