MCU 32KB FLASH EEPROM 32-VFQFPN

STM8S105K6U6

Manufacturer Part NumberSTM8S105K6U6
DescriptionMCU 32KB FLASH EEPROM 32-VFQFPN
ManufacturerSTMicroelectronics
SeriesSTM8S
STM8S105K6U6 datasheet
 

Specifications of STM8S105K6U6

Core ProcessorSTM8Core Size8-Bit
Speed16MHzConnectivityI²C, IrDA, LIN, SPI, UART/USART
PeripheralsBrown-out Detect/Reset, POR, PWM, WDTNumber Of I /o25
Program Memory Size32KB (32K x 8)Program Memory TypeFLASH
Eeprom Size1K x 8Ram Size2K x 8
Voltage - Supply (vcc/vdd)2.95 V ~ 5.5 VData ConvertersA/D 7x10b
Oscillator TypeInternalOperating Temperature-40°C ~ 85°C
Package / Case32-VFQFN, 32-VFQFPNProcessor SeriesSTM8S10x
CoreSTM8Data Bus Width8 bit
Data Ram Size2 KBInterface TypeI2C, SPI, UART
Maximum Clock Frequency16 MHzNumber Of Programmable I/os25
Number Of Timers8Maximum Operating Temperature+ 85 C
Mounting StyleSMD/SMT3rd Party Development ToolsEWSTM8
Development Tools By SupplierSTICE-SYS001Minimum Operating Temperature- 40 C
On-chip Adc10 bit, 7 ChannelFor Use With497-10040 - EVAL KIT STM8S DISCOVERY497-10593 - KIT STARTER FOR STM8S207/8 SER
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther names497-10123
STM8S105K6U6
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STM8S105xx
10.3.12.1
Functional EMS (electromagnetic susceptibility)
While executing a simple application (toggling 2 LEDs through I/O ports), the product is
stressed by two electromagnetic events until a failure occurs (indicated by the LEDs).
FESD: Functional electrostatic discharge (positive and negative) is applied on all pins of
the device until a functional disturbance occurs. This test conforms with the IEC 61000-4-2
standard.
FTB: A burst of fast transient voltage (positive and negative) is applied to V
through a 100 pF capacitor, until a functional disturbance occurs. This test conforms with
the IEC 61000-4-4 standard.
A device reset allows normal operations to be resumed. The test results are given in the table
below based on the EMS levels and classes defined in application note AN1709 (EMC design
guide for STMicrocontrollers).
10.3.12.2
Designing hardened software to avoid noise problems
EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and
prequalification tests in relation with the EMC level requested for his application.
Software recommendations
The software flowchart must include the management of runaway conditions such as:
Corrupted program counter
Unexpected reset
Critical data corruption (control registers...)
Prequalification trials
Most of the common failures (unexpected reset and program counter corruption) can be
recovered by applying a low state on the NRST pin or the oscillator pins for 1 second.
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring. See application note AN1015 (Software techniques
for improving microcontroller EMC performance).
Symbol
Parameter
V
Voltage limits to be
FESD
applied on any I/O pin to
induce a functional
disturbance
V
Fast transient voltage
EFTB
burst limits to be applied
through 100 pF on V
Table 48: EMS data
Conditions
V
= 5 V, T
= 25 °C, f
DD
A
MASTER
conforming to IEC 1000-4-2
V
= 5 V, T
= 25 °C ,f
DD
A
MASTER
MHz,conforming to IEC 1000-4-4
DD
DocID14771 Rev 10
Electrical characteristics
and V
DD
SS
Level/
class
= 16 MHz,
(1)
2/B
= 16
(1)
4/A
101/127