MCU 32KB FLASH EEPROM 32-VFQFPN

STM8S105K6U6

Manufacturer Part NumberSTM8S105K6U6
DescriptionMCU 32KB FLASH EEPROM 32-VFQFPN
ManufacturerSTMicroelectronics
SeriesSTM8S
STM8S105K6U6 datasheet
 

Specifications of STM8S105K6U6

Core ProcessorSTM8Core Size8-Bit
Speed16MHzConnectivityI²C, IrDA, LIN, SPI, UART/USART
PeripheralsBrown-out Detect/Reset, POR, PWM, WDTNumber Of I /o25
Program Memory Size32KB (32K x 8)Program Memory TypeFLASH
Eeprom Size1K x 8Ram Size2K x 8
Voltage - Supply (vcc/vdd)2.95 V ~ 5.5 VData ConvertersA/D 7x10b
Oscillator TypeInternalOperating Temperature-40°C ~ 85°C
Package / Case32-VFQFN, 32-VFQFPNProcessor SeriesSTM8S10x
CoreSTM8Data Bus Width8 bit
Data Ram Size2 KBInterface TypeI2C, SPI, UART
Maximum Clock Frequency16 MHzNumber Of Programmable I/os25
Number Of Timers8Maximum Operating Temperature+ 85 C
Mounting StyleSMD/SMT3rd Party Development ToolsEWSTM8
Development Tools By SupplierSTICE-SYS001Minimum Operating Temperature- 40 C
On-chip Adc10 bit, 7 ChannelFor Use With497-10040 - EVAL KIT STM8S DISCOVERY497-10593 - KIT STARTER FOR STM8S207/8 SER
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther names497-10123
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Page 80/127

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Electrical characteristics
Symbol
Parameter
Fast programming time for 1 block
(128 bytes)
t
Erase time for 1 block (128 bytes)
erase
N
Erase/write cycles
RW
memory)
Erase/write cycles(data memory)
t
Data retention (program memory)
RET
after 10k erase/write cycles at T
= +85 °C
Data retention (data memory) after
10k erase/write cycles at T
°C
Data retention (data memory) after
300 k erase/write cyclesat T
+125 °C
I
Supply current (Flash
DD
programming or erasing for 1 to
128 bytes)
(1)
Data based on characterization results, not tested in production.
(2)
The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes
even when a write/erase operation addresses a single byte.
10.3.6
I/O port pin characteristics
General characteristics
Subject to general operating conditions for V
pins must be kept at a fixed voltage: using the output mode of the I/O for example or an
external pull-up or pull-down resistor.
Symbol
Parameter
V
Input low level
IL
voltage
80/127
Conditions
(2)
(program
T
= +85 °C
A
(2)
T
= +125 ° C
A
T
= 55° C
RET
A
T
= 55° C
RET
= +85
A
T
= 85° C
RET
=
A
and T
unless otherwise specified. All unused
DD
A
Table 38: I/O static characteristics
Conditions
V
= 5 V
DD
DocID14771 Rev 10
STM8S105xx
(1)
Min
Typ
Max
Unit
3.0
3.3
ms
3.0
3.3
ms
10 k
cycles
300 k
1.0M
20
years
20
1.0
2.0
mA
Min
Typ
Max
Unit
-0.3
0.3 x V
V
DD