MC68HC908QY1CPE Freescale Semiconductor, MC68HC908QY1CPE Datasheet - Page 163

• Manufacturer Part Number: MC68HC908QY1CPE
• Description: IC MCU 1.5K FLASH 16-DIP
• Manufacturer: Freescale Semiconductor
• Series: HC08r

Specifications of MC68HC908QY1CPE

• Core Processor: HC08
• Core Size: 8-Bit
• Speed: 8MHz
• Peripherals: LVD, POR, PWM
• Number Of I /o: 13
• Program Memory Size: 1.5KB (1.5K x 8)
• Program Memory Type: FLASH
• Ram Size: 128 x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 16-DIP (0.300", 7.62mm)
• Processor Series: HC08Q
• Core: HC08
• Data Bus Width: 8 bit
• Data Ram Size: 128 B
• Maximum Clock Frequency: 8 MHz
• Number Of Programmable I/os: 14
• Number Of Timers: 2
• Maximum Operating Temperature: + 85 C
• Mounting Style: Through Hole
• Development Tools By Supplier: FSICEBASE, M68CBL05AE, DEMO908QB8, DEMO908QC16
• Minimum Operating Temperature: - 40 C
• Controller Family/series: HC08
• No. Of I/o's: 14
• Ram Memory Size: 128Byte
• Cpu Speed: 8MHz
• No. Of Timers: 2
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Data Converters: -
• Connectivity: -
• Lead Free Status / Rohs Status: Details

16.16 Memory Characteristics
Freescale Semiconductor
RAM data retention voltage
FLASH program bus clock frequency
FLASH read bus clock frequency
FLASH page erase time
FLASH mass erase time
FLASH PGM/ERASE to HVEN setup time
FLASH high-voltage hold time
FLASH high-voltage hold time (mass erase)
FLASH program hold time
FLASH program time
FLASH return to read time
FLASH cumulative program HV period
FLASH endurance
FLASH data retention time
1. f
2. t
3. t
4. Typical endurance was evaluated for this product family. For additional information on how Freescale defines Typical
5. Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated
<1 k cycles
>1 k cycles
clearing HVEN to 0.
t
Endurance, please refer to Engineering Bulletin EB619.
to 25•C using the Arrhenius equation. For additional information on how Freescale defines Typical Data Retention, please
refer to Engineering Bulletin EB618.
Read
RCV
HV
HV
is defined as the cumulative high voltage programming time to the same row before next erase.
must satisfy this condition: t
is defined as the time it needs before the FLASH can be read after turning off the high voltage charge pump, by
is defined as the frequency range for which the FLASH memory can be read.
(4)
Characteristic
(5)
NVS
MC68HC908QY/QT Family Data Sheet, Rev. 6
+ t
NVH
+ t
PGS
+ (t
PROG
x 32) ≤ t
Symbol
f
t
HV
t
Read
t
MErase
V
t
t
RCV
t
PROG
t
t
t
Erase
NVHL
HV
NVH
PGS
NVS
RDR
—
—
—
maximum.
(3)
(2)
(1)
10 k
Min
100
1.3
0.9
3.6
10
30
15
—
1
0
4
5
5
1
100 k
Typ
100
—
—
—
—
—
—
—
—
—
—
—
1
4
Memory Characteristics
Max
8 M
1.1
5.5
40
—
—
—
—
—
—
—
—
—
—
4
Cycles
Years
MHz
Unit
ms
ms
ms
Hz
μs
μs
μs
μs
μs
μs
V
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