MC908QB8CDWE Freescale Semiconductor, MC908QB8CDWE Datasheet - Page 226

• Manufacturer Part Number: MC908QB8CDWE
• Description: IC MCU 8BIT 8K FLASH 16-SOIC
• Manufacturer: Freescale Semiconductor
• Series: HC08r

Specifications of MC908QB8CDWE

• Core Processor: HC08
• Core Size: 8-Bit
• Speed: 8MHz
• Connectivity: SCI, SPI
• Peripherals: LVD, POR, PWM
• Number Of I /o: 13
• Program Memory Size: 8KB (8K x 8)
• Program Memory Type: FLASH
• Ram Size: 256 x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 10x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 16-SOIC (0.300", 7.5mm Width)
• Processor Series: HC08QB
• Core: HC08
• Data Bus Width: 8 bit
• Data Ram Size: 256 B
• Interface Type: SCI, SPI
• Maximum Clock Frequency: 8 MHz
• Number Of Programmable I/os: 14
• Number Of Timers: 4
• Operating Supply Voltage: 3 V to 5 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Development Tools By Supplier: FSICEBASE, M68CBL05AE, DEMO908QB8, DEMO908QC16
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 10 bit
• For Use With: DEMO908QB8 - BOARD DEMO FOR MC68HC908QB8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Details

Electrical Specifications
18.17 Memory Characteristics
226
RAM data retention voltage
FLASH program bus clock frequency
FLASH PGM/ERASE supply voltage (V
FLASH read bus clock frequency
FLASH page erase time
FLASH mass erase time
FLASH PGM/ERASE to HVEN setup time
FLASH high-voltage hold time
FLASH high-voltage hold time (mass erase)
FLASH program hold time
FLASH program time
FLASH return to read time
FLASH cumulative program HV period
FLASH endurance
FLASH data retention time
1. Typical values are for reference only and are not tested in production.
2. Values are based on characterization results, not tested in production.
3. f
4. t
5. t
6. Typical endurance was evaluated for this product family. For additional information on how Freescale Semiconductor
7. Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated
<1 K cycles
>1 K cycles
ing HVEN to 0.
t
defines Typical Endurance, please refer to Engineering Bulletin EB619.
to 25•C using the Arrhenius equation. For additional information on how Freescale Semiconductor defines Typical Data
Retention, please refer to Engineering Bulletin EB618.
RCV
Read
HV
HV
is defined as the cumulative high voltage programming time to the same row before next erase.
must satisfy this condition: t
is defined as the time it needs before the FLASH can be read after turning off the high voltage charge pump, by clear-
is defined as the frequency range for which the FLASH memory can be read.
(6)
Characteristic
(7)
(2)
NVS
+ t
DD
NVH
)
MC68HC908QB8 Data Sheet, Rev. 3
+ t
PGS
+ (t
PROG
x 32) ≤ t
V
PGM/ERASE
Symbol
f
t
HV
t
Read
t
MErase
V
t
t
RCV
t
PROG
t
t
t
Erase
NVHL
HV
NVH
PGS
NVS
RDR
—
—
—
maximum.
(5)
(4)
(3)
10 k
Min
100
1.3
2.7
0.9
3.6
10
30
15
—
1
0
4
5
5
1
Typ
100 k
100
—
—
—
—
—
—
—
—
—
—
—
—
1
4
Freescale Semiconductor
(1)
Max
8 M
5.5
1.1
5.5
40
—
—
—
—
—
—
—
—
—
—
4
Cycles
Years
MHz
Unit
ms
ms
ms
Hz
μs
μs
μs
μs
μs
μs
V
V