R5F21276SNFP#U0 Renesas Electronics America, R5F21276SNFP#U0 Datasheet - Page 53

IC R8C/27 MCU FLASH 32LQFP

R5F21276SNFP#U0

Manufacturer Part Number
R5F21276SNFP#U0
Description
IC R8C/27 MCU FLASH 32LQFP
Manufacturer
Renesas Electronics America
Series
R8C/2x/27r
Datasheets

Specifications of R5F21276SNFP#U0

Core Size
16/32-Bit
Program Memory Size
32KB (32K x 8)
Core Processor
R8C
Speed
20MHz
Connectivity
I²C, LIN, SIO, SSU, UART/USART
Peripherals
LED, POR, Voltage Detect, WDT
Number Of I /o
25
Program Memory Type
FLASH
Ram Size
1.5K x 8
Voltage - Supply (vcc/vdd)
2.2 V ~ 5.5 V
Data Converters
A/D 12x10b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 85°C
Package / Case
32-LQFP
No. Of I/o's
25
Ram Memory Size
1.5KB
Cpu Speed
20MHz
No. Of Timers
4
Digital Ic Case Style
LQFP
Supply Voltage Range
2.2V To 5.5V
Embedded Interface Type
I2C, UART
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
R0K521276S000BE - KIT DEV RSK-R8C/26-29R0E521000EPB00 - PROBE EMULATOR FOR PC7501
Eeprom Size
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
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Part Number:
R5F21276SNFP#U0R5F21276SNFP
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
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Part Number:
R5F21276SNFP#U0
Manufacturer:
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Quantity:
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Company:
Part Number:
R5F21276SNFP#U0
Manufacturer:
RENESAS
Quantity:
2 500
Company:
Part Number:
R5F21276SNFP#U0
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Company:
Part Number:
R5F21276SNFP#U0R5F21276SNFP#V2
Manufacturer:
POWER
Quantity:
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R8C/26 Group, R8C/27 Group
Rev.2.10
REJ03B0168-0210
Table 5.37
NOTES:
t
d(SR-SUS)
Symbol
1. V
2. Definition of programming/erasure endurance
3. Endurance to guarantee all electrical characteristics after program and erase. (1 to Min. value can be guaranteed).
4. In a system that executes multiple programming operations, the actual erasure count can be reduced by writing to sequential
5. If an error occurs during block erase, attempt to execute the clear status register command, then execute the block erase
6. Customers desiring program/erase failure rate information should contact their Renesas technical support representative.
7. The data hold time includes time that the power supply is off or the clock is not supplied.
The programming and erasure endurance is defined on a per-block basis.
If the programming and erasure endurance is n (n = 100 or 1,000), each block can be erased n times. For example, if 1,024
1-byte writes are performed to different addresses in block A, a 1 Kbyte block, and then the block is erased, the
programming/erasure endurance still stands at one.
However, the same address must not be programmed more than once per erase operation (overwriting prohibited).
addresses in turn so that as much of the block as possible is used up before performing an erase operation. For example,
when programming groups of 16 bytes, the effective number of rewrites can be minimized by programming up to 128 groups
before erasing them all in one operation. It is also advisable to retain data on the erasure endurance of each block and limit
the number of erase operations to a certain number.
command at least three times until the erase error does not occur.
CC
Sep 26, 2008
= 2.7 to 5.5 V at T
Program/erase endurance
Byte program time
Block erase time
Time delay from suspend request until
suspend
Interval from erase start/restart until
following suspend request
Interval from program start/restart until
following suspend request
Time from suspend until program/erase
restart
Program, erase voltage
Read voltage
Program, erase temperature
Data hold time
Flash Memory (Program ROM) Electrical Characteristics
(7)
Parameter
opr
Page 51 of 69
= 0 to 60 ° C, unless otherwise specified.
(2)
R8C/26 Group
R8C/27 Group
Ambient temperature = 55 ° C
Conditions
1,000
100
Min.
650
2.7
2.7
20
0
0
(3)
(3)
Typ.
Standard
0.4
50
5. Electrical Characteristics
97 + CPU clock
3 + CPU clock
× 6 cycles
× 4 cycles
Max.
400
5.5
5.5
60
9
times
times
year
Unit
µ s
µ s
µ s
ns
µ s
° C
V
V
s

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