MC9S12D64MFUE Freescale Semiconductor, MC9S12D64MFUE Datasheet - Page 101

• Manufacturer Part Number: MC9S12D64MFUE
• Description: IC MCU 64K FLASH 25MHZ 80-QFP
• Manufacturer: Freescale Semiconductor
• Series: HCS12r

Specifications of MC9S12D64MFUE

• Core Processor: HCS12
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: CAN, I²C, SCI, SPI
• Peripherals: PWM, WDT
• Number Of I /o: 59
• Program Memory Size: 64KB (64K x 8)
• Program Memory Type: FLASH
• Eeprom Size: 1K x 8
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 2.35 V ~ 5.25 V
• Data Converters: A/D 16x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 80-QFP
• Processor Series: S12D
• Core: HCS12
• Data Bus Width: 16 bit
• Data Ram Size: 4 KB
• Interface Type: CAN/I2C/SCI/SPI
• Maximum Clock Frequency: 25 MHz
• Number Of Programmable I/os: 49
• Number Of Timers: 8
• Operating Supply Voltage: 4.5 V to 5.25 V
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWHCS12
• Development Tools By Supplier: M68KIT912DP256
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 2 (8-ch x 10-bit)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

A.3 NVM, Flash and EEPROM
A.3.1 NVM timing
The time base for all NVM program or erase operations is derived from the oscillator. A minimum
oscillator frequency f
do not have any means to monitor the frequency and will not prevent program or erase operation at
frequencies above or below the specified minimum. Attempting to program or erase the NVM modules at
a lower frequency a full program or erase transition is not assured.
The Flash and EEPROM program and erase operations are timed using a clock derived from the oscillator
using the FCLKDIV and ECLKDIV registers respectively. The frequency of this clock must be set within
the limits specified as f
The minimum program and erase times shown in Table A-11 are calculated for maximum f
maximum f
A.3.1.1 Single Word Programming
The programming time for single word programming is dependant on the bus frequency as a well as on
the frequency f
A.3.1.2 Row Programming
This applies only to the Flash where up to 32 words in a row can be programmed consecutively by keeping
the command pipeline filled. The time to program a consecutive word can be calculated as:
The time to program a whole row is:
Row programming is more than 2 times faster than single word programming.
A.3.1.3 Sector Erase
Erasing a 512 byte Flash sector or a 4 byte EEPROM sector takes:
NOTE:
bus
. The maximum times are calculated for minimum f
Unless otherwise noted the abbreviation NVM (Non Volatile Memory) is used for
both Flash and EEPROM.
NVMOP
NVMOSC
and can be calculated according to the following formula.
NVMOP
is required for performing program or erase operations. The NVM modules
.
t
t
swpgm
t
bwpgm
brpgm
=
=
=
9
t
4
swpgm
---------------------
f
---------------------
f
NVMOP
NVMOP
1
1
+
31 t
+
+
25
MC9S12DJ64 Device User Guide — V01.20
9
bwpgm
NVMOP
----------
f
----------
f
bus
bus
1
1
and a f
bus
of 2MHz.
NVMOP
and
101