MC9S12D64MFUE Freescale Semiconductor, MC9S12D64MFUE Datasheet - Page 90

• Manufacturer Part Number: MC9S12D64MFUE
• Description: IC MCU 64K FLASH 25MHZ 80-QFP
• Manufacturer: Freescale Semiconductor
• Series: HCS12r

Specifications of MC9S12D64MFUE

• Core Processor: HCS12
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: CAN, I²C, SCI, SPI
• Peripherals: PWM, WDT
• Number Of I /o: 59
• Program Memory Size: 64KB (64K x 8)
• Program Memory Type: FLASH
• Eeprom Size: 1K x 8
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 2.35 V ~ 5.25 V
• Data Converters: A/D 16x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 80-QFP
• Processor Series: S12D
• Core: HCS12
• Data Bus Width: 16 bit
• Data Ram Size: 4 KB
• Interface Type: CAN/I2C/SCI/SPI
• Maximum Clock Frequency: 25 MHz
• Number Of Programmable I/os: 49
• Number Of Timers: 8
• Operating Supply Voltage: 4.5 V to 5.25 V
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWHCS12
• Development Tools By Supplier: M68KIT912DP256
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 2 (8-ch x 10-bit)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

MC9S12DJ64 Device User Guide — V01.20
A.1.6 ESD Protection and Latch-up Immunity
All ESD testing is in conformity with CDF-AEC-Q100 Stress test qualification for Automotive Grade
Integrated Circuits. During the device qualification ESD stresses were performed for the Human Body
Model (HBM), the Machine Model (MM) and the Charge Device Model.
A device will be defined as a failure if after exposure to ESD pulses the device no longer meets the device
specification. Complete DC parametric and functional testing is performed per the applicable device
specification at room temperature followed by hot temperature, unless specified otherwise in the device
specification.
A.1.7 Operating Conditions
This chapter describes the operating conditions of the device. Unless otherwise noted those conditions
apply to all the following data.
90
Num C
1
2
3
4
5
Human Body
Machine
Latch-up
Model
T Human Body Model (HBM)
T Machine Model (MM)
T Charge Device Model (CDM)
T
T
Latch-up Current at T
positive
negative
Latch-up Current at T
positive
negative
Table A-3 ESD and Latch-Up Protection Characteristics
Series Resistance
Storage Capacitance
Number of Pulse per pin
positive
negative
Series Resistance
Storage Capacitance
Number of Pulse per pin
positive
negative
Minimum input voltage limit
Maximum input voltage limit
Table A-2 ESD and Latch-up Test Conditions
A
A
Rating
= 125 C
= 27 C
Description
Symbol
V
V
V
I
I
HBM
CDM
LAT
LAT
MM
Symbol
R1
R1
C
C
-
-
2000
+100
+200
Min
-100
-200
200
500
Value
1500
100
200
-2.5
7.5
1
1
0
3
3
-
-
Max
-
-
-
-
-
Ohm
Unit
Ohm
pF
pF
V
V
Unit
mA
mA
V
V
V