IC MCU 1.5K FLASH 16-TSSOP

MC68HC908QY1VDTE

Manufacturer Part NumberMC68HC908QY1VDTE
DescriptionIC MCU 1.5K FLASH 16-TSSOP
ManufacturerFreescale Semiconductor
SeriesHC08
MC68HC908QY1VDTE datasheet
 


Specifications of MC68HC908QY1VDTE

Core ProcessorHC08Core Size8-Bit
Speed8MHzPeripheralsLVD, POR, PWM
Number Of I /o13Program Memory Size1.5KB (1.5K x 8)
Program Memory TypeFLASHRam Size128 x 8
Voltage - Supply (vcc/vdd)2.7 V ~ 5.5 VOscillator TypeInternal
Operating Temperature-40°C ~ 105°CPackage / Case16-TSSOP
Processor SeriesHC08QCoreHC08
Data Bus Width8 bitData Ram Size128 B
Maximum Clock Frequency8 MHzNumber Of Programmable I/os14
Number Of Timers2Maximum Operating Temperature+ 105 C
Mounting StyleSMD/SMTDevelopment Tools By SupplierFSICEBASE, M68CBL05AE, DEMO908QB8, DEMO908QC16
Minimum Operating Temperature- 40 CLead Free Status / RoHS StatusLead free / RoHS Compliant
Eeprom Size-Data Converters-
Connectivity-  
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Memory
ERASE — Erase Control Bit
This read/write bit configures the memory for erase operation. ERASE is interlocked with the PGM bit
such that both bits cannot be equal to 1 or set to 1 at the same time.
1 = Erase operation selected
0 = Erase operation unselected
PGM — Program Control Bit
This read/write bit configures the memory for program operation. PGM is interlocked with the ERASE
bit such that both bits cannot be equal to 1 or set to 1 at the same time.
1 = Program operation selected
0 = Program operation unselected
2.6.2 FLASH Page Erase Operation
Use the following procedure to erase a page of FLASH memory. A page consists of 64 consecutive bytes
starting from addresses $XX00, $XX40, $XX80, or $XXC0. The 48-byte user interrupt vectors area also
forms a page. Any FLASH memory page can be erased alone.
1. Set the ERASE bit and clear the MASS bit in the FLASH control register.
2. Read the FLASH block protect register.
3. Write any data to any FLASH location within the address range of the block to be erased.
(minimum 10 μs).
4. Wait for a time, t
NVS
5. Set the HVEN bit.
6. Wait for a time, t
(minimum 1 ms or 4 ms).
Erase
7. Clear the ERASE bit.
(minimum 5 μs).
8. Wait for a time, t
NVH
9. Clear the HVEN bit.
(typical 1 μs), the memory can be accessed in read mode again.
10. After time, t
RCV
Programming and erasing of FLASH locations cannot be performed by
code being executed from the FLASH memory. While these operations
must be performed in the order as shown, but other unrelated operations
may occur between the steps.
A page erase of the vector page will erase the internal oscillator trim values
at $FFC0 and $FFC1.
In applications that require more than 1000 program/erase cycles, use the 4 ms page erase specification
to get improved long-term reliability. Any application can use this 4 ms page erase specification. However,
in applications where a FLASH location will be erased and reprogrammed less than 1000 times, and
speed is important, use the 1 ms page erase specification to get a shorter cycle time.
34
NOTE
CAUTION
MC68HC908QY/QT Family Data Sheet, Rev. 6
Freescale Semiconductor