IC MCU 1.5K FLASH 16-TSSOP

MC68HC908QY1VDTE

Manufacturer Part NumberMC68HC908QY1VDTE
DescriptionIC MCU 1.5K FLASH 16-TSSOP
ManufacturerFreescale Semiconductor
SeriesHC08
MC68HC908QY1VDTE datasheet
 

Specifications of MC68HC908QY1VDTE

Core ProcessorHC08Core Size8-Bit
Speed8MHzPeripheralsLVD, POR, PWM
Number Of I /o13Program Memory Size1.5KB (1.5K x 8)
Program Memory TypeFLASHRam Size128 x 8
Voltage - Supply (vcc/vdd)2.7 V ~ 5.5 VOscillator TypeInternal
Operating Temperature-40°C ~ 105°CPackage / Case16-TSSOP
Processor SeriesHC08QCoreHC08
Data Bus Width8 bitData Ram Size128 B
Maximum Clock Frequency8 MHzNumber Of Programmable I/os14
Number Of Timers2Maximum Operating Temperature+ 105 C
Mounting StyleSMD/SMTDevelopment Tools By SupplierFSICEBASE, M68CBL05AE, DEMO908QB8, DEMO908QC16
Minimum Operating Temperature- 40 CLead Free Status / RoHS StatusLead free / RoHS Compliant
Eeprom Size-Data Converters-
Connectivity-  
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2.6.3 FLASH Mass Erase Operation
Use the following procedure to erase the entire FLASH memory to read as a 1:
1. Set both the ERASE bit and the MASS bit in the FLASH control register.
2. Read the FLASH block protect register.
3. Write any data to any FLASH address
(minimum 10 μs).
4. Wait for a time, t
NVS
5. Set the HVEN bit.
6. Wait for a time, t
(minimum 4 ms).
MErase
7. Clear the ERASE and MASS bits.
Mass erase is disabled whenever any block is protected (FLBPR does not
equal $FF).
(minimum 100 μs).
8. Wait for a time, t
NVHL
9. Clear the HVEN bit.
(typical 1 μs), the memory can be accessed in read mode again.
10. After time, t
RCV
Programming and erasing of FLASH locations cannot be performed by
code being executed from the FLASH memory. While these operations
must be performed in the order as shown, but other unrelated operations
may occur between the steps.
A mass erase will erase the internal oscillator trim values at $FFC0 and
$FFC1.
2.6.4 FLASH Program Operation
Programming of the FLASH memory is done on a row basis. A row consists of 32 consecutive bytes
starting from addresses $XX00, $XX20, $XX40, $XX60, $XX80, $XXA0, $XXC0, or $XXE0. Use the
following step-by-step procedure to program a row of FLASH memory
Figure 2-4
shows a flowchart of the programming algorithm.
Only bytes which are currently $FF may be programmed.
1. Set the PGM bit. This configures the memory for program operation and enables the latching of
address and data for programming.
2. Read the FLASH block protect register.
3. Write any data to any FLASH location within the address range desired.
(minimum 10 μs).
4. Wait for a time, t
NVS
5. Set the HVEN bit.
(minimum 5 μs).
6. Wait for a time, t
PGS
7. Write data to the FLASH address being programmed
1. When in monitor mode, with security sequence failed (see
instead of any FLASH address.
Freescale Semiconductor
(1)
within the FLASH memory address range.
NOTE
NOTE
CAUTION
NOTE
(2)
.
15.3.2
Security), write to the FLASH block protect register
MC68HC908QY/QT Family Data Sheet, Rev. 6
FLASH Memory (FLASH)
35