M30622F8PFP#U3C Renesas Electronics America, M30622F8PFP#U3C Datasheet - Page 68

IC M16C MCU FLASH 64K 100QFP

M30622F8PFP#U3C

Manufacturer Part Number
M30622F8PFP#U3C
Description
IC M16C MCU FLASH 64K 100QFP
Manufacturer
Renesas Electronics America
Series
M16C™ M16C/60r
Datasheets

Specifications of M30622F8PFP#U3C

Core Processor
M16C/60
Core Size
16-Bit
Speed
24MHz
Connectivity
I²C, IEBus, UART/USART
Peripherals
DMA, WDT
Number Of I /o
85
Program Memory Size
64KB (64K x 8)
Program Memory Type
FLASH
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 26x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
100-QFP
For Use With
867-1000 - KIT QUICK START RENESAS 62PR0K33062PS001BE - R0K33062P STARTER KITR0K33062PS000BE - KIT EVAL STARTER FOR M16C/62PM3062PT3-CPE-3 - EMULATOR COMPACT M16C/62P/30P
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
M16C/62P Group (M16C/62P, M16C/62PT)
Rev.2.41
REJ03B0001-0241
Table 5.31
NOTES:
I
I
I
Symbol
CC
det4
det3
1. Referenced to V
2. With one timer operated using fC32.
3. This indicates the memory in which the program to be executed exists.
4. I
specified.
det
I
I
Jan 10, 2006
det4
det3
Power Supply Current
(V
Low Voltage Detection Dissipation Current
Reset Area Detection Dissipation Current
is dissipation current when the following bit is set to “1” (detection circuit enabled).
CC1
: VC27 bit in the VCR2 register
: VC26 bit in the VCR2 register
=V
Electrical Characteristics (2)
CC2
=2.7V to 3.6V)
CC1
=V
Parameter
Page 66 of 96
CC2
=2.7 to 3.3V, V
In single-chip
mode, the output
pins are open and
other pins are V
SS
= 0V at T
(4)
(4)
SS
(1)
Mask ROM
Flash
Memory
Flash Memory
Program
Flash Memory
Erase
Mask ROM
Flash Memory
Mask ROM
Flash Memory
opr
= − 20 to 85 ° C / − 40 to 85 ° C, f(BCLK)=10MHz unless otherwise
Measuring Condition
f(BCLK)=10MHz
No division
No division,
On-chip oscillation
f(BCLK)=10MHz,
No division
No division,
On-chip oscillation
f(BCLK)=10MHz,
VCC1=3.0V
f(BCLK)=10MHz,
VCC1=3.0V
f(XCIN)=32kHz
Low power dissipation
mode, ROM
f(BCLK)=32kHz
Low power dissipation
mode, RAM
f(BCLK)=32kHz
Low power dissipation
mode, Flash Memory
On-chip oscillation,
Wait mode
f(BCLK)=32kHz
Wait mode
Oscillation capability High
f(BCLK)=32kHz
Wait mode
Oscillation capability Low
Stop mode
Topr =25 ° C
(2)
(2)
(3)
(3)
,
,
(3)
5. Electrical Characteristics
Min.
Standard
Typ.
420
1.8
6.0
1.8
0.7
0.6
0.4
12
22
25
25
45
8
1
8
Max.
3.0
11
13
4
2
Unit
mA
mA
mA
mA
mA
mA
µ A
µ A
µ A
µ A
µ A
µ A
µ A
µ A
µ A

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