M30626FJPFP#U7C Renesas Electronics America, M30626FJPFP#U7C Datasheet - Page 47

IC M16C/62P MCU FLASH 100QFP

M30626FJPFP#U7C

Manufacturer Part Number
M30626FJPFP#U7C
Description
IC M16C/62P MCU FLASH 100QFP
Manufacturer
Renesas Electronics America
Series
M16C™ M16C/60r
Datasheets

Specifications of M30626FJPFP#U7C

Core Processor
M16C/60
Core Size
16-Bit
Speed
24MHz
Connectivity
I²C, IEBus, UART/USART
Peripherals
DMA, WDT
Number Of I /o
85
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Ram Size
31K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 26x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
100-QFP
For Use With
867-1000 - KIT QUICK START RENESAS 62PR0K33062PS001BE - R0K33062P STARTER KITR0K33062PS000BE - KIT EVAL STARTER FOR M16C/62PM3062PT3-CPE-3 - EMULATOR COMPACT M16C/62P/30P
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
M16C/62P Group (M16C/62P, M16C/62PT)
Table 5.6
Flash Memory Version Electrical Characteristics
U5)
Symbol
Program and Erase Endurance
Word Program Time (V
Lock Bit Program Time
Block Erase Time
=5.0V )
(V
CC1
Erase All Unlocked Blocks Time
t
Flash Memory Circuit Stabilization Wait Time
PS
(5)
Data Hold Time
Table 5.7
Flash Memory Version Electrical Characteristics
U7, U9) (Block A and Block 1
Symbol
Program and Erase Endurance
Word Program Time (V
Lock Bit Program Time
Block Erase Time
=5.0V )
(V
CC1
t
Flash Memory Circuit Stabilization Wait Time
PS
(5)
Data Hold Time
NOTES:
=4.5 to 5.5V, 3.0 to 3.6V at Topr = 0 to 60 ° C (D3, D5, U3, U5) unless otherwise specified.
1. Referenced to V
CC1
2. n denotes the number of block erases.
3. Program and Erase Endurance refers to the number of times a block erase can be performed.
If the program and erase endurance is n (n=100, 1,000, or 10,000), each block can be erased n times.
For example, if a 4 Kbytes block A is erased after writing 1 word data 2,048 times, each to a different address, this counts as
one program and erase endurance. Data cannot be written to the same address more than once without erasing the block.
(Rewrite prohibited)
4. Maximum number of E/W cycles for which operation is guaranteed.
5. Topr = -40 to 85 ° C (D3, D7, U3, U7) / -20 to 85 ° C (D5, D9, U5, U9).
6. Referenced to V
= 4.5 to 5.5V, 3.0 to 3.6V at T
CC1
7. Table 5.7 applies for block A or block 1 program and erase endurance > 1,000. Otherwise, use Table 5.6.
8. To reduce the number of program and erase endurance when working with systems requiring numerous rewrites, write to
unused word addresses within the block instead of rewrite. Erase block only after all possible addresses are used. For
example, an 8-word program can be written 256 times maximum before erase becomes necessary.
Maintaining an equal number of erasure between block A and block 1 will also improve efficiency. It is important to track the
total number of times erasure is used.
9. Should erase error occur during block erase, attempt to execute clear status register command, then block erase command
at least three times until erase error disappears.
10. Set the PM17 bit in the PM1 register to “1” (wait state) when executing more than 100 times rewrites (D7, D9, U7 and U9).
11. Customers desiring E/W failure rate information should contact their Renesas technical support representative.
Table 5.8
Flash Memory Version Program / Erase Voltage and Read Operation Voltage
Characteristics (at T
-20 to 85 °C(D9, U9))
Flash Program, Erase Voltage
V
= 3.3 V ± 0.3 V or 5.0 V ± 0.5 V
CC1
Rev.2.41
Jan 10, 2006
Page 45 of 96
REJ03B0001-0241
Parameter
(3)
=5.0V )
CC1
4-Kbyte block
8-Kbyte block
32-Kbyte block
64-Kbyte block
(2)
(7)
)
Parameter
(3, 8, 9)
=5.0V )
CC1
4-Kbyte block
= -40 to 85 °C (D7, U7) / -20 to 85 °C (D9, U9) unless otherwise specified.
opr
= 0 to 60 °C(D3, D5, U3, U5), T
opr
Flash Read Operation Voltage
V
=2.7 to 5.5 V
CC1
5. Electrical Characteristics
for 100 cycle products (D3, D5, U3,
(1)
Standard
Min.
Typ.
Max.
100
25
200
25
200
0.3
4
0.3
4
0.5
4
0.8
4
4×n
15
10
(6)
for 10,000 cycle products (D7, D9,
Standard
Min.
Typ.
Max.
(4)
10,000
25
25
0.3
15
10
= -40 to 85 °C(D7, U7) / T
opr
Unit
cycle
µ s
µ s
s
s
s
s
s
µ s
year
Unit
cycle
µ s
µ s
s
µ s
year
=
opr

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