IC PIC MCU FLASH 16K 28-SSOP

PIC24F16KA102-I/SS

Manufacturer Part NumberPIC24F16KA102-I/SS
DescriptionIC PIC MCU FLASH 16K 28-SSOP
ManufacturerMicrochip Technology
SeriesPIC® XLP™ 24F
PIC24F16KA102-I/SS datasheets
 


Specifications of PIC24F16KA102-I/SS

Program Memory TypeFLASHProgram Memory Size16KB (5.5K x 24)
Package / Case28-SSOPCore ProcessorPIC
Core Size16-BitSpeed32MHz
ConnectivityI²C, IrDA, SPI, UART/USARTPeripheralsBrown-out Detect/Reset, POR, PWM, WDT
Number Of I /o24Eeprom Size512 x 8
Ram Size1.5K x 8Voltage - Supply (vcc/vdd)1.8 V ~ 3.6 V
Data ConvertersA/D 9x10bOscillator TypeInternal
Operating Temperature-40°C ~ 85°CProcessor SeriesPIC24F
CorePICData Bus Width16 bit
Data Ram Size1.5 KBInterface TypeI2C/IrDA/SPI/UART
Maximum Clock Frequency32 MHzNumber Of Programmable I/os24
Number Of Timers3Operating Supply Voltage1.8 V to 3.6 V
Maximum Operating Temperature+ 85 CMounting StyleSMD/SMT
3rd Party Development Tools52713-733, 52714-737, 53276-922, EWDSPICDevelopment Tools By SupplierPG164130, DV164035, DV244005, DV164005, DM240001
Minimum Operating Temperature- 40 COn-chip Adc9-ch x 10-bit
Lead Free Status / RoHS StatusLead free / RoHS CompliantFor Use WithMA240017 - MODULE PLUG-IN PIC24F16KA102 PIM
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PIC24F16KA102 FAMILY
5.5.1
PROGRAMMING ALGORITHM FOR
FLASH PROGRAM MEMORY
The user can program one row of Flash program
memory at a time by erasing the programmable row.
The general process is:
1.
Read
a
row
of
program
(32 instructions) and store in data RAM.
2.
Update the program data in RAM with the
desired new data.
3.
Erase a row (see Example 5-1):
a)
Set the NVMOP bits (NVMCON<5:0>) to
‘011000’ to configure for row erase. Set the
ERASE
(NVMCON<6>)
(NVMCON<14>) bits.
b)
Write the starting address of the block to be
erased into the TBLPAG and W registers.
c)
Write 55h to NVMKEY.
d)
Write AAh to NVMKEY.
e)
Set the WR bit (NVMCON<15>). The erase
cycle begins and the CPU stalls for the
duration of the erase cycle. When the erase is
done, the WR bit is cleared automatically.
EXAMPLE 5-1:
ERASING A PROGRAM MEMORY ROW – ASSEMBLY LANGUAGE CODE
; Set up NVMCON for row erase operation
MOV
#0x4058, W0
MOV
W0, NVMCON
; Init pointer to row to be ERASED
MOV
#tblpage(PROG_ADDR), W0
MOV
W0, TBLPAG
MOV
#tbloffset(PROG_ADDR), W0
TBLWTL W0, [W0]
DISI
#5
MOV
#0x55, W0
MOV
W0, NVMKEY
MOV
#0xAA, W1
MOV
W1, NVMKEY
BSET
NVMCON, #WR
NOP
NOP
DS39927B-page 46
4.
Write the first 32 instructions from data RAM into
the program memory buffers (see Example 5-1).
5.
Write the program block to Flash memory:
a)
Set the NVMOP bits to ‘011000’ to
configure for row programming. Clear the
ERASE bit and set the WREN bit.
memory
b)
Write 55h to NVMKEY.
c)
Write AAh to NVMKEY.
d)
Set the WR bit. The programming cycle
begins and the CPU stalls for the duration of
the write cycle. When the write to Flash
memory is done, the WR bit is cleared
automatically.
and
WREN
For protection against accidental operations, the write
initiate sequence for NVMKEY must be used to allow
any erase or program operation to proceed. After the
programming command has been executed, the user
must wait for the programming time until programming
is complete. The two instructions following the start of
the programming sequence should be NOPs, as
displayed in Example 5-5.
;
; Initialize NVMCON
;
; Initialize PM Page Boundary SFR
; Initialize in-page EA[15:0] pointer
; Set base address of erase block
; Block all interrupts
for next 5 instructions
; Write the 55 key
;
; Write the AA key
; Start the erase sequence
; Insert two NOPs after the erase
; command is asserted
Preliminary
© 2009 Microchip Technology Inc.