STM8S103F2P3TR STMicroelectronics, STM8S103F2P3TR Datasheet - Page 69

• Manufacturer Part Number: STM8S103F2P3TR
• Description: MCU 8BIT 4K FLASH 20TSSOP
• Manufacturer: STMicroelectronics
• Series: STM8Sr

Specifications of STM8S103F2P3TR

• Core Processor: STM8
• Core Size: 8-Bit
• Speed: 16MHz
• Connectivity: I²C, IrDA, LIN, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number Of I /o: 16
• Program Memory Size: 4KB (4K x 8)
• Program Memory Type: FLASH
• Eeprom Size: 640 x 8
• Ram Size: 1K x 8
• Voltage - Supply (vcc/vdd): 2.95 V ~ 5.5 V
• Data Converters: A/D 5x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 20-TSSOP
• Processor Series: STM8S10x
• Core: STM8
• 3rd Party Development Tools: EWSTM8
• Development Tools By Supplier: STICE-SYS001
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

STM8S103K3 STM8S103F3 STM8S103F2
10.3.6
Symbol
V
V
V
R
t
I
R
lkg
IL
IH
hys
pu
, t
F
I/O port pin characteristics
General characteristics
Subject to general operating conditions for V
pins must be kept at a fixed voltage: using the output mode of the I/O for example or an
external pull-up or pull-down resistor.
Symbol
Parameter
Input low level voltage
Input high level voltage
Hysteresis
Pull-up resistor
Rise and fall time
(10 % - 90 %)
Digital input leakage current
I
(1)
(2)
even when a write/erase operation addresses a single byte.
DD
Data based on characterization results, not tested in production.
The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes
Parameter
Data retention (data
memory) after 300k
erase/write cycles at
T
Supply current (Flash
programming or erasing
for 1 to 128 bytes)
(1)
A
= +125 °C
Table 38: I/O static characteristics
Conditions
V
V
Fast I/Os
Load = 50 pF
Standard and high sink
I/Os
Load = 50 pF
V
DocID15441 Rev 6
DD
DD
SS
≤ V
= 5 V
= 5 V, V
IN
Conditions
T
≤V
RET
IN
DD
DD
= 85°C
= V
and T
SS
A
unless otherwise specified. All unused
Min
-0.3 V
0.7 x
V
30
DD
Min
1
(1)
Typ
700
45
Electrical characteristics
Typ
2
Max
0.3 x
V
V
0.3
60
20
125
±1
DD
DD
(2)
(2)
Max
(2)
+
Unit
V
mV
kΩ
ns
μA
Unit
mA
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