STM8S103F2P3TR STMicroelectronics, STM8S103F2P3TR Datasheet - Page 88

no-image

STM8S103F2P3TR

Manufacturer Part Number
STM8S103F2P3TR
Description
MCU 8BIT 4K FLASH 20TSSOP
Manufacturer
STMicroelectronics
Series
STM8Sr
Datasheet

Specifications of STM8S103F2P3TR

Core Processor
STM8
Core Size
8-Bit
Speed
16MHz
Connectivity
I²C, IrDA, LIN, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
16
Program Memory Size
4KB (4K x 8)
Program Memory Type
FLASH
Eeprom Size
640 x 8
Ram Size
1K x 8
Voltage - Supply (vcc/vdd)
2.95 V ~ 5.5 V
Data Converters
A/D 5x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Package / Case
20-TSSOP
Processor Series
STM8S10x
Core
STM8
3rd Party Development Tools
EWSTM8
Development Tools By Supplier
STICE-SYS001
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STM8S103F2P3TR
Manufacturer:
ST
0
Part Number:
STM8S103F2P3TR
0
Electrical characteristics
10.3.11.3
88/113
Prequalification trials
Most of the common failures (unexpected reset and program counter corruption) can be
recovered by applying a low state on the NRST pin or the oscillator pins for 1 second.
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring. See application note AN1015 (Software techniques
for improving microcontroller EMC performance).
Electromagnetic interference (EMI)
Based on a simple application running on the product (toggling 2 LEDs through the I/O ports),
the product is monitored in terms of emission. This emission test is in line with the norm SAE
IEC 61967-2 which specifies the board and the loading of each pin.
Symbol
Symbol
V
V
(1)
in AN2860 (EMC guidelines for STM8S microcontrollers).
FESD
EFTB
S
Data obtained with HSI clock configuration, after applying HW recommendations described
EMI
Parameter
Voltage limits to be
applied on any I/O pin to
induce a functional
disturbance
Fast transient voltage
burst limits to be applied
through 100 pF on V
and V
functional disturbance
Parameter
Peak level
SS
pins to induce a
Conditions
General
conditions
V
T
LQFP32
package
A
DD
= 25 °C
= 5 V
DocID15441 Rev 6
DD
Table 48: EMS data
Conditions
Table 49: EMI data
V
(HSI clock), conforming to IEC 61000-4-2
V
(HSI clock),conforming to IEC 61000-4-4
DD
DD
Monitored
frequency band
= 3.3 V, T
0.1 MHz to
30 MHz
30 MHz to
= 3.3 V, T
STM8S103K3 STM8S103F3 STM8S103F2
A
A
= 25 °C ,f
= 25 °C, f
Max f
16 MHz/
8 MHz
5
4
MASTER
MASTER
HSE
/f
= 16 MHz
= 16 MHz
16 MHz/
16 MHz
CPU
5
5
(1)
Level/
class
2/B
4/A
dBμV
Unit
(1)
(1)

Related parts for STM8S103F2P3TR