STM8S103F3P6

Manufacturer Part NumberSTM8S103F3P6
DescriptionMCU 8BIT 8KB FLASH 20-TSSOP
ManufacturerSTMicroelectronics
SeriesSTM8S
STM8S103F3P6 datasheet
 

Specifications of STM8S103F3P6

Core ProcessorSTM8Core Size8-Bit
Speed16MHzConnectivityI²C, IrDA, LIN, SPI, UART/USART
PeripheralsBrown-out Detect/Reset, POR, PWM, WDTNumber Of I /o16
Program Memory Size8KB (8K x 8)Program Memory TypeFLASH
Eeprom Size640 x 8Ram Size1K x 8
Voltage - Supply (vcc/vdd)2.95 V ~ 5.5 VData ConvertersA/D 5x10b
Oscillator TypeInternalOperating Temperature-40°C ~ 85°C
Package / Case20-TSSOPProcessor SeriesSTM8S10x
CoreSTM8Data Bus Width8 bit
Data Ram Size1 KBInterface TypeI2C, SPI, UART
Maximum Clock Frequency16 MHzNumber Of Programmable I/os16
Number Of Timers7Maximum Operating Temperature+ 85 C
Mounting StyleSMD/SMT3rd Party Development ToolsEWSTM8
Development Tools By SupplierSTM8/128-MCKIT, STM8S-DISCOVERY, ST-LINK, STICE-SYS001, STX-RLINKMinimum Operating Temperature- 40 C
On-chip Adc10 bit, 5 ChannelFeatured ProductSTM32 Cortex-M3 Companion Products
For Use With497-10593 - KIT STARTER FOR STM8S207/8 SERLead Free Status / RoHS StatusLead free / RoHS Compliant
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STM8S103K3 STM8S103F3 STM8S103F2
3. End point correlation line
E
= Total unadjusted error: maximum deviation between the actual and the ideal transfer
T
curves.
E
= Offset error: deviation between the first actual transition and the first ideal one.
O
E
= Gain error: deviation between the last ideal transition and the last actual one.
G
E
= Differential linearity error: maximum deviation between actual steps and the ideal
D
one.
E
= Integral linearity error: maximum deviation between any actual transition and the end
L
point correlation line.
10.3.11
EMC characteristics
Susceptibility tests are performed on a sample basis during product characterization.
10.3.11.1
Functional EMS (electromagnetic susceptibility)
While executing a simple application (toggling 2 LEDs through I/O ports), the product is
stressed by two electromagnetic events until a failure occurs (indicated by the LEDs).
FESD: Functional electrostatic discharge (positive and negative) is applied on all pins of
the device until a functional disturbance occurs. This test conforms with the IEC 61000-4-2
standard.
FTB: A burst of fast transient voltage (positive and negative) is applied to V
through a 100 pF capacitor, until a functional disturbance occurs. This test conforms with
the IEC 61000-4-4 standard.
A device reset allows normal operations to be resumed. The test results are given in the table
below based on the EMS levels and classes defined in application note AN1709 (EMC design
guide for STMicrocontrollers).
10.3.11.2
Designing hardened software to avoid noise problems
EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and
prequalification tests in relation with the EMC level requested for his application.
Figure 44: Typical application with ADC
V DD
V AIN
R AIN
AINx
C AIN
DocID15441 Rev 6
Electrical characteristics
STM8
V T
0.6 V
10-bit A/D
conversion
V T
I L
C ADC
0.6 V
± 1 µA
and V
DD
SS
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