STM8S105S4T6C STMicroelectronics, STM8S105S4T6C Datasheet - Page 80

MCU 16KB FLASH MEM 16MHZ 44LQFP

STM8S105S4T6C

Manufacturer Part Number
STM8S105S4T6C
Description
MCU 16KB FLASH MEM 16MHZ 44LQFP
Manufacturer
STMicroelectronics
Series
STM8Sr
Datasheet

Specifications of STM8S105S4T6C

Core Processor
STM8
Core Size
8-Bit
Speed
16MHz
Connectivity
I²C, IrDA, LIN, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
34
Program Memory Size
16KB (16K x 8)
Program Memory Type
FLASH
Eeprom Size
1K x 8
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
2.95 V ~ 5.5 V
Data Converters
A/D 9x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
44-LQFP
Processor Series
STM8S10x
Core
STM8
Data Bus Width
8 bit
Data Ram Size
2 KB
Interface Type
I2C, SPI, UART
Maximum Clock Frequency
16 MHz
Number Of Programmable I/os
34
Number Of Timers
8
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWSTM8
Development Tools By Supplier
STICE-SYS001
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 9 Channel
For Use With
497-10040 - EVAL KIT STM8S DISCOVERY497-10593 - KIT STARTER FOR STM8S207/8 SER497-5046 - KIT TOOL FOR ST7/UPSD/STR7 MCU
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-8819

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Electrical characteristics
10.3.6
80/127
I/O port pin characteristics
General characteristics
Subject to general operating conditions for V
pins must be kept at a fixed voltage: using the output mode of the I/O for example or an
external pull-up or pull-down resistor.
Symbol
Symbol
t
N
t
I
(1)
(2)
even when a write/erase operation addresses a single byte.
V
erase
RET
DD
IL
RW
Data based on characterization results, not tested in production.
The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes
Parameter
Parameter
Fast programming time for 1 block
(128 bytes)
Erase time for 1 block (128 bytes)
Erase/write cycles
memory)
Erase/write cycles(data memory)
Data retention (program memory)
after 10k erase/write cycles at T
= +85 °C
Data retention (data memory) after
10k erase/write cycles at T
°C
Data retention (data memory) after
300 k erase/write cyclesat T
+125 °C
Supply current (Flash
programming or erasing for 1 to
128 bytes)
Input low level
voltage
Table 38: I/O static characteristics
(2)
Conditions
V
(program
DocID14771 Rev 10
DD
= 5 V
A
= +85
A
=
(2)
A
DD
Conditions
T
T
T
T
T
and T
A
A
RET
RET
RET
= +85 °C
= +125 ° C
= 55° C
= 55° C
= 85° C
A
unless otherwise specified. All unused
Min
-0.3
Min
10 k
300 k
20
20
1.0
Typ
(1)
Typ
3.0
3.0
1.0M
2.0
Max
0.3 x V
Max
3.3
3.3
STM8S105xx
DD
Unit
Unit
V
ms
ms
cycles
years
mA

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