STM32F101C8U6 STMicroelectronics, STM32F101C8U6 Datasheet - Page 50

MCU 32BIT ARM 128K FLASH 48-QFN

STM32F101C8U6

Manufacturer Part Number
STM32F101C8U6
Description
MCU 32BIT ARM 128K FLASH 48-QFN
Manufacturer
STMicroelectronics
Series
STM32r
Datasheet

Specifications of STM32F101C8U6

Core Processor
ARM® Cortex-M3™
Core Size
32-Bit
Speed
36MHz
Connectivity
I²C, IrDA, LIN, SPI, UART/USART
Peripherals
DMA, PDR, POR, PVD, PWM, Temp Sensor, WDT
Number Of I /o
37
Program Memory Size
64KB (64K x 8)
Program Memory Type
FLASH
Ram Size
10K x 8
Voltage - Supply (vcc/vdd)
2 V ~ 3.6 V
Data Converters
A/D 10x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
48-LQFP Exposed Pad, 48-eLQFP, 48-HLQFP
Processor Series
STM32F101x
Core
ARM Cortex M3
Data Bus Width
32 bit
Data Ram Size
10 KB
Interface Type
I2C, SPI, USART
Maximum Clock Frequency
36 MHz
Number Of Programmable I/os
37
Number Of Timers
3
Operating Supply Voltage
2 V to 3.6 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWARM, EWARM-BL, MDK-ARM, RL-ARM, ULINK2
Minimum Operating Temperature
- 40 C
On-chip Adc
12 bit, 10 Channel
Featured Product
STM32 Cortex-M3 Companion Products
Eeprom Size
-
For Use With
497-10030 - STARTER KIT FOR STM32497-6438 - BOARD EVALUTION FOR STM32 512K
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
 Details

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Electrical characteristics
5.3.9
5.3.10
50/87
Table 26.
1. Based on device characterization, not tested in production.
2. Take care of using the appropriate multiplier factors so as to have PLL input clock values compatible with
Memory characteristics
Flash memory
The characteristics are given at T
Table 27.
1. Guaranteed by design, not tested in production.
Table 28.
1. Based on characterization not tested in production.
2. Cycling performed over the whole temperature range.
EMC characteristics
Susceptibility tests are performed on a sample basis during device characterization.
t
Jitter
Symbol
LOCK
Symbol
N
t
t
ERASE
the range defined by f
V
RET
t
END
t
I
Symbol
prog
ME
DD
prog
Endurance
Data retention
16-bit programming time
Page (1 KB) erase time
Mass erase time
Supply current
Programming voltage
PLL characteristics
Flash memory characteristics
Flash memory endurance and data retention
PLL lock time
Cycle-to-cycle jitter
Parameter
Parameter
PLL_OUT
.
Parameter
Doc ID 13586 Rev 14
A
= –40 to 85 °C unless otherwise specified.
Read mode
f
state, V
Write / Erase modes
f
Power-down mode / Halt,
V
HCLK
HCLK
T
T
DD
A
A
T
= 85 °C, 1 kcycle
= 55 °C, 10 kcycle
A
= 3.0 to 3.6 V
T
T
T
= –40 °C to 85 °C
= 36 MHz with 1 wait
= 36 MHz, V
A
A
A
DD
Conditions
= –40 to +85 °C
= –40 to +85 °C
= –40 to +85 °C
Conditions
= 3.3 V
DD
(2)
= 3.3 V
(2)
Min
(1)
STM32F101x8, STM32F101xB
Min
30
20
10
Min
(1)
20
20
40
2
Value
Typ
(1)
Value
Typ
52.5
Typ
Max
300
200
Max
Max
(1)
3.6
70
40
40
20
50
5
(1)
kcycles
Years
Unit
Unit
µs
ps
Unit
mA
mA
ms
ms
µA
µs
V

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