STM32F103C6T7A STMicroelectronics, STM32F103C6T7A Datasheet - Page 52

MCU ARM 32BIT 32KB FLASH 48LQFP

STM32F103C6T7A

Manufacturer Part Number
STM32F103C6T7A
Description
MCU ARM 32BIT 32KB FLASH 48LQFP
Manufacturer
STMicroelectronics
Series
STM32r
Datasheets

Specifications of STM32F103C6T7A

Core Processor
ARM® Cortex-M3™
Core Size
32-Bit
Speed
72MHz
Connectivity
CAN, I²C, IrDA, LIN, SPI, UART/USART, USB
Peripherals
DMA, Motor Control PWM, PDR, POR, PVD, PWM, Temp Sensor, WDT
Number Of I /o
37
Program Memory Size
32KB (32K x 8)
Program Memory Type
FLASH
Ram Size
10K x 8
Voltage - Supply (vcc/vdd)
2 V ~ 3.6 V
Data Converters
A/D 10x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 105°C
Package / Case
48-LQFP
Featured Product
STM32 Cortex-M3 Companion Products
Eeprom Size
-
Cpu Family
STM32
Device Core
ARM Cortex-M3
Device Core Size
32b
Frequency (max)
72MHz
Interface Type
CAN/I2C/SPI/USART
Total Internal Ram Size
10KB
# I/os (max)
37
Number Of Timers - General Purpose
3
Operating Supply Voltage (typ)
2.5/3.3V
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
2V
On-chip Adc
2(10-chx12-bit)
Instruction Set Architecture
RISC
Operating Temp Range
-40C to 105C
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
48
Package Type
LQFP
For Use With
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Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

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Electrical characteristics
5.3.10
52/87
Table 28.
1. Guaranteed by design, not tested in production.
Table 29.
1. Based on characterization, not tested in production.
2. Cycling performed over the whole temperature range.
EMC characteristics
Susceptibility tests are performed on a sample basis during device characterization.
Functional EMS (electromagnetic susceptibility)
While a simple application is executed on the device (toggling 2 LEDs through I/O ports). the
device is stressed by two electromagnetic events until a failure occurs. The failure is
indicated by the LEDs:
A device reset allows normal operations to be resumed.
The test results are given in
defined in application note AN1709.
Symbol
Symbol
N
V
t
I
RET
DD
prog
END
Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until
a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.
FTB: A Burst of Fast Transient voltage (positive and negative) is applied to V
V
compliant with the IEC 61000-4-4 standard.
SS
through a 100 pF capacitor, until a functional disturbance occurs. This test is
Supply current
Programming voltage
Endurance
Data retention
Parameter
Flash memory characteristics (continued)
Flash memory endurance and data retention
Parameter
T
T
1 kcycle
1 kcycle
10 kcycles
A
A
= –40 to +105 °C (7 suffix versions)
Table
= –40 to +85 °C (6 suffix versions)
Doc ID 15060 Rev 5
(2)
(2)
Read mode
f
states, V
Write / Erase modes
f
Power-down mode / Halt,
V
30. They are based on the EMS levels and classes
HCLK
HCLK
DD
(2)
at T
at T
at T
Conditions
= 3.0 to 3.6 V
A
A
= 72 MHz with 2 wait
= 72 MHz, V
= 85 °C
= 105 °C
A
DD
Conditions
= 55 °C
= 3.3 V
DD
= 3.3 V
STM32F103x4, STM32F103x6
Min
Min
30
10
20
10
2
(1)
(1)
Value
Typ
Typ
Max
Max
3.6
20
50
5
(1)
DD
kcycles
and
Years
Unit
Unit
mA
mA
µA
V

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