STM32F101RCT6TR STMicroelectronics, STM32F101RCT6TR Datasheet - Page 105

• Manufacturer Part Number: STM32F101RCT6TR
• Description: MCU 32BIT ARM 64K FLASH 64-LQFP
• Manufacturer: STMicroelectronics
• Series: STM32r

Specifications of STM32F101RCT6TR

• Core Processor: ARM® Cortex-M3™
• Core Size: 32-Bit
• Speed: 36MHz
• Connectivity: I²C, IrDA, LIN, SPI, UART/USART
• Peripherals: DMA, PDR, POR, PVD, PWM, Temp Sensor, WDT
• Number Of I /o: 51
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 2 V ~ 3.6 V
• Data Converters: A/D 16x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 64-LQFP
• Processor Series: STM32F101x
• Core: ARM Cortex M3
• Data Bus Width: 32 bit
• Data Ram Size: 32 KB
• Interface Type: I2C, SPI, USART
• Maximum Clock Frequency: 36 MHz
• Number Of Programmable I/os: 51
• Number Of Timers: 9
• Operating Supply Voltage: 2 V to 3.6 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWARM, EWARM-BL, MDK-ARM, RL-ARM, ULINK2
• Development Tools By Supplier: STM3210E-EVAL
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 12 bit, 16 Channel
• For Use With: 497-10030 - STARTER KIT FOR STM32497-6438 - BOARD EVALUTION FOR STM32 512K
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Details

STM32F101xC, STM32F101xD, STM32F101xE
Table 65.
24-Sep-2009
21-Jul-2009
Date
Document revision history (continued)
Revision
6
7
Figure 1: STM32F101xC, STM32F101xD and STM32F101xE access
line block diagram
Note 5
STM32F101xx pin
V
voltage.
f
characteristics.
Table 23: HSE 4-16 MHz oscillator characteristics
modified below
Figure 40: Recommended NRST pin protection
replaced by C in
Table 24: LSE oscillator characteristics (fLSE = 32.768
modified and moved below the tables.
Table 25: HSI oscillator characteristics
from
Jitter added to
In
timings: t
In
timings: t
In
t
In
t
In
t
In
cycles: t
Table 52: SPI characteristics
C
R
Table 57: DAC characteristics
buffered DAC
Number of DACs corrected in
I
consumptions in Stop and Standby
Figure 13: Typical current consumption on VBAT with RTC on vs.
temperature at different VBAT values
IEC 1000 standard updated to IEC 61000 and SAE J1752/3 updated to
IEC 61967-2 in
Table 57: DAC characteristics
Small text changes.
HSE_ext
h(AD_NADV)
h(A_NWE)
h(CLKH-NWAITV)
DD_VBAT
RERINT
ADC
AIN
Table 31: Asynchronous non-multiplexed SRAM/PSRAM/NOR read
Table 32: Asynchronous non-multiplexed SRAM/PSRAM/NOR write
Table 33: Asynchronous multiplexed NOR/PSRAM read
Table 34: Asynchronous multiplexed NOR/PSRAM write
Table 35: Synchronous multiplexed NOR/PSRAM read
Table 40: Switching characteristics for NAND Flash read and write
Doc ID 14610 Rev 7
Table 27: Low-power mode wakeup
max values modified in
and R
updated and
h(NOE-D)
min modified in
and T
h(BL_NOE)
h(A_NWE)
updated in
modified.
and t
AIN
added.
Coeff
Table 28: PLL
Figure 19: Typical application with an 8 MHz
Section 5.3.11: EMC characteristics on page
modified.
parameters modified in
Table 23: HSE 4-16 MHz oscillator characteristics
h(A_NOE)
modified.
and t
modified.
definitions.
and t
added to
Note 4
Table 17: Typical and maximum current
h(Data_NWE)
h(A_NOE)
Table 21: High-speed external user clock
modified.
added in
Table 54: RAIN max for fADC = 14
Table 13: Embedded internal reference
modified.
characteristics.
Table 3: STM32F101xx
modified.
modified.
Changes
modified.
modified.
modes.
Table 5: High-density
added.
modified. Conditions removed
Table 53: ADC
Figure 49: 12-bit buffered /non-
timings.
modified. C
modified.
Revision history
family.
characteristics.
kHz), notes
timings:
timings:
timings:
L1
Note 1
crystal.
75.
and C
MHz.
105/106
and
L2