MC68HC908QT2CFQ Freescale Semiconductor, MC68HC908QT2CFQ Datasheet - Page 33

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MC68HC908QT2CFQ

Manufacturer Part Number
MC68HC908QT2CFQ
Description
MCU 8-BIT 1536V FLASH 8-DFN
Manufacturer
Freescale Semiconductor
Series
HC08r
Datasheet

Specifications of MC68HC908QT2CFQ

Core Processor
HC08
Core Size
8-Bit
Speed
8MHz
Peripherals
LVD, POR, PWM
Number Of I /o
5
Program Memory Size
1.5KB (1.5K x 8)
Program Memory Type
FLASH
Ram Size
128 x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
8-DFN
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Data Converters
-
Connectivity
-
2.6 FLASH Memory (FLASH)
This subsection describes the operation of the embedded FLASH memory. The FLASH memory can be
read, programmed, and erased from a single external supply. The program and erase operations are
enabled through the use of an internal charge pump.
The FLASH memory consists of an array of 4096 or 1536 bytes with an additional 48 bytes for user
vectors. The minimum size of FLASH memory that can be erased is 64 bytes; and the maximum size of
FLASH memory that can be programmed in a program cycle is 32 bytes (a row). Program and erase
operations are facilitated through control bits in the FLASH control register (FLCR). Details for these
operations appear later in this section. The address ranges for the user memory and vectors are:
2.6.1 FLASH Control Register
The FLASH control register (FLCR) controls FLASH program and erase operations.
HVEN — High Voltage Enable Bit
MASS — Mass Erase Control Bit
Freescale Semiconductor
1. No security feature is absolutely secure. However, Freescale’s strategy is to make reading or copying the FLASH difficult
This read/write bit enables high voltage from the charge pump to the memory for either program or
erase operation. It can only be set if either PGM =1 or ERASE =1 and the proper sequence for
program or erase is followed.
This read/write bit configures the memory for mass erase operation.
for unauthorized users.
1 = High voltage enabled to array and charge pump on
0 = High voltage disabled to array and charge pump off
1 = Mass erase operation selected
0 = Mass erase operation unselected
$EE00 – $FDFF; user memory, 4096 bytes: MC68HC908QY4 and MC68HC908QT4
$F800 – $FDFF; user memory, 1536 bytes: MC68HC908QY2, MC68HC908QT2,
MC68HC908QY1 and MC68HC908QT1
$FFD0 – $FFFF; user interrupt vectors, 48 bytes.
Address:
An erased bit reads as a 1 and a programmed bit reads as a 0.
A security feature prevents viewing of the FLASH contents.
Reset:
Read:
Write:
$FE08
Bit 7
0
0
Figure 2-3. FLASH Control Register (FLCR)
= Unimplemented
MC68HC908QY/QT Family Data Sheet, Rev. 6
6
0
0
5
0
0
NOTE
4
0
0
HVEN
3
0
MASS
2
0
(1)
ERASE
1
0
FLASH Memory (FLASH)
PGM
Bit 0
0
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