R5F21275SNFP#U0 Renesas Electronics America, R5F21275SNFP#U0 Datasheet - Page 400

IC R8C/27 MCU FLASH 32LQFP

R5F21275SNFP#U0

Manufacturer Part Number
R5F21275SNFP#U0
Description
IC R8C/27 MCU FLASH 32LQFP
Manufacturer
Renesas Electronics America
Series
R8C/2x/27r
Datasheet

Specifications of R5F21275SNFP#U0

Core Processor
R8C
Core Size
16/32-Bit
Speed
20MHz
Connectivity
I²C, LIN, SIO, SSU, UART/USART
Peripherals
LED, POR, Voltage Detect, WDT
Number Of I /o
25
Program Memory Size
24KB (24K x 8)
Program Memory Type
FLASH
Ram Size
1.5K x 8
Voltage - Supply (vcc/vdd)
2.2 V ~ 5.5 V
Data Converters
A/D 12x10b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 85°C
Package / Case
32-LQFP
For Use With
R0K521276S000BE - KIT DEV RSK-R8C/26-29R0E521000EPB00 - PROBE EMULATOR FOR PC7501
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

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R8C/26 Group, R8C/27 Group
Rev.2.10
REJ09B0278-0210
19.7.1.4
19.7.1.5
19.7.1.6
19.7.1.7
19.7.1.8
Write 0 before writing 1 when setting the FMR01, FMR02, or FMR11 bit to 1. Do not generate an interrupt
between writing 0 and 1.
In EW0 Mode, if the supply voltage drops while rewriting any block in which a rewrite control program is
stored, it may not be possible to rewrite the flash memory because the rewrite control program cannot be
rewritten correctly. In this case, use standard serial I/O mode.
Do not write additions to the already programmed address.
Do not enter stop mode or wait mode during erase-suspend.
To perform programming and erasure, use VCC = 2.7 to 5.5 V as the supply voltage. Do not perform
programming and erasure at less than 2.7 V.
Sep 26, 2008
How to Access
Rewriting User ROM Area
Entering Stop Mode or Wait Mode
Program and Erase Voltage for Flash Memory
Program
Page 381 of 453
19. Flash Memory

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