MC9S08GT60CFD Freescale Semiconductor, MC9S08GT60CFD Datasheet - Page 266

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MC9S08GT60CFD

Manufacturer Part Number
MC9S08GT60CFD
Description
MCU 8BIT 60K FLASH 48-QFN
Manufacturer
Freescale Semiconductor
Series
HCS08r
Datasheet

Specifications of MC9S08GT60CFD

Core Processor
HCS08
Core Size
8-Bit
Speed
40MHz
Connectivity
I²C, SCI, SPI
Peripherals
LVD, POR, PWM, WDT
Number Of I /o
39
Program Memory Size
60KB (60K x 8)
Program Memory Type
FLASH
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 3.6 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
48-QFN Exposed Pad
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

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Appendix A Electrical Characteristics
266
LVI adder to stop3
(LVDSE = LVDE = 1)
Typicals are measured at 25°C. See
Values given here are preliminary estimates prior to completing characterization.
All modules except ATD active, ICG configured for FBE, and does not include any dc loads on port pins
Values are characterized but not tested on every part.
Every unit tested to this parameter. All other values in the Max column are guaranteed by characterization.
Most customers are expected to find that auto-wakeup from stop2 or stop3 can be used instead of the higher current wait mode.
Wait mode typical is 560 µA at 3 V and 422 µA at 2V with f
18
16
14
12
10
Parameter
8
6
4
2
0
1.6
Figure A-6. Typical Run I
1.8
Table A-5. Supply Current Characteristics (continued)
2.0
Figure A-6
2.2
MC9S08GB/GT Data Sheet, Rev. 2.3
2.4
through
2.6
V
DD
Symbol
(Vdc)
DD
2.8
Figure A-9
for FBE and FEE Modes, I
Bus
3.0
= 1 MHz.
V
DD
3.2
3
2
for typical curves across voltage/temperature.
(V)
3.4
3.8
Typical
70 µA
60 µA
DD
1
20 MHz, ATD
20 MHz, ATD
8 MHz, ATD
8 MHz, ATD
1 MHz, ATD
1 MHz, ATD
vs V
DD
off
off
off
off
Freescale Semiconductor
off
off
Max
, FEE, 25°C
, FBE, 25°C
, FEE, 25°C
, FBE, 25°C
, FEE, 25°C
, FBE, 25°C
2
Temp. (°C)
55
70
85
55
70
85

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