IC R8C/2B MCU FLASH 96+2K 64LQFP

R5F212BASNFA#U0

Manufacturer Part NumberR5F212BASNFA#U0
DescriptionIC R8C/2B MCU FLASH 96+2K 64LQFP
ManufacturerRenesas Electronics America
SeriesR8C/2x/2B
R5F212BASNFA#U0 datasheet
 


Specifications of R5F212BASNFA#U0

Core ProcessorR8CCore Size16/32-Bit
Speed20MHzConnectivityI²C, LIN, SIO, SSU, UART/USART
PeripheralsPOR, PWM, Voltage Detect, WDTNumber Of I /o55
Program Memory Size96KB (96K x 8)Program Memory TypeFLASH
Ram Size7K x 8Voltage - Supply (vcc/vdd)2.2 V ~ 5.5 V
Data ConvertersA/D 12x10b; D/A 2x8bOscillator TypeInternal
Operating Temperature-20°C ~ 85°CPackage / Case64-LQFP
For Use WithR0K5212D8S001BE - KIT STARTER FOR R8C/2DR0K5212D8S000BE - KIT DEV FOR R8C/2DLead Free Status / RoHS StatusLead free / RoHS Compliant
Eeprom Size-  
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R8C/2A Group, R8C/2B Group
Table 5.30
Electrical Characteristics (5) [V
Symbol
Parameter
V
Output “H” voltage
Except P2_0 to P2_7,
OH
XOUT
P2_0 to P2_7
XOUT
V
Output “L” voltage
Except P2_0 to P2_7,
OL
XOUT
P2_0 to P2_7
XOUT
V
V
Hysteresis
T+-
T-
INT0, INT1, INT2,
INT3, KI0, KI1, KI2,
KI3, TRAIO, TRFI,
RXD0, RXD1, CLK0,
CLK1, CLK2, SSI,
SCL, SDA, SSO
RESET
I
Input “H” current
IH
I
Input “L” current
IL
R
Pull-up resistance
PULLUP
R
Feedback resistance
XIN
fXIN
R
Feedback resistance
XCIN
fXCIN
V
RAM hold voltage
RAM
NOTE:
= -20 to 85 ° C (N version) / -40 to 85 ° C (D version), f(XIN) = 5 MHz, unless otherwise specified.
1. V
= 2.2 V at T
CC
opr
Rev.2.10
Nov 26, 2007
Page 55 of 60
REJ03B0182-0210
= 2.2 V]
CC
Condition
Min.
I
= -1 mA
V
- 0.5
OH
CC
Drive capacity
I
= -2 mA
V
- 0.5
OH
CC
HIGH
Drive capacity
I
= -1 mA
V
- 0.5
OH
CC
LOW
Drive capacity
I
= -0.1 mA
V
- 0.5
OH
CC
HIGH
= -50 µ A
Drive capacity
I
V
- 0.5
OH
CC
LOW
I
= 1 mA
OL
Drive capacity
I
= 2 mA
OL
HIGH
Drive capacity
I
= 1 mA
OL
LOW
Drive capacity
I
= 0.1 mA
OL
HIGH
= 50 µ A
Drive capacity
I
OL
LOW
0.05
0.05
VI = 2.2 V
VI = 0 V
VI = 0 V
100
During stop mode
1.8
5. Electrical Characteristics
Standard
Unit
Typ.
Max.
V
V
CC
V
V
CC
V
V
CC
V
V
CC
V
V
CC
0.5
V
0.5
V
0.5
V
0.5
V
0.5
V
0.3
V
0.15
V
µ A
4.0
µ A
-4.0
k Ω
200
600
M Ω
5
M Ω
35
V