MC68HC11E1VFNE3 Freescale Semiconductor, MC68HC11E1VFNE3 Datasheet - Page 54

• Manufacturer Part Number: MC68HC11E1VFNE3
• Description: MCU 8-BIT 512 RAM 3MHZ 52-PLCC
• Manufacturer: Freescale Semiconductor
• Series: HC11r

Specifications of MC68HC11E1VFNE3

• Core Processor: HC11
• Core Size: 8-Bit
• Speed: 3MHz
• Connectivity: SCI, SPI
• Peripherals: POR, WDT
• Number Of I /o: 38
• Program Memory Type: ROMless
• Eeprom Size: 512 x 8
• Ram Size: 512 x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 105°C
• Package / Case: 52-PLCC
• Processor Series: HC11E
• Core: HC11
• Data Bus Width: 8 bit
• Data Ram Size: 512 B
• Interface Type: SCI, SPI
• Maximum Clock Frequency: 3 MHz
• Number Of Programmable I/os: 38
• Number Of Timers: 8
• Maximum Operating Temperature: + 105 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 8 bit, 8 Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Program Memory Size: -
• Lead Free Status / Rohs Status: Details

Operating Modes and On-Chip Memory
EPGM — EPROM/OTPROM/EEPROM Programming Voltage Enable Bit
During EEPROM programming, the ROW and BYTE bits of PPROG are not used. If the frequency of the
E clock is 1 MHz or less, set the CSEL bit in the OPTION register. Recall that 0s must be erased by a
separate erase operation before programming. The following examples of how to program an EEPROM
byte assume that the appropriate bits in BPROT are cleared.
2.5.1.3 EEPROM Bulk Erase
This is an example of how to bulk erase the entire EEPROM. The CONFIG register is not affected in this
example.
2.5.1.4 EEPROM Row Erase
This example shows how to perform a fast erase of large sections of EEPROM.
54
PROG
BULKE
ROWE
0 = Programming voltage to EEPROM array switched off
1 = Programming voltage to EEPROM array switched on
LDAB
STAB
STAA
LDAB
STAB
JSR
CLR
LDAB
STAB
STAA
LDAB
STAB
JSR
CLR
LDAB
STAB
STAB
LDAB
STAB
JSR
CLR
#$02
$103B
$XXXX
#$03
$103B
DLY10
$103B
#$06
$103B
$XXXX
#$07
$103B
DLY10
$103B
#$0E
$103B
0,X
#$0F
$103B
DLY10
$103B
EELAT = 1
Set EELAT bit
Store data to EEPROM address
(for valid EEPROM address see memory
map for each device)
EELAT = 1, EPGM = 1
Turn on programming voltage
Delay 10 ms
Turn off high voltage and set
to READ mode
EELAT = 1, ERASE = 1
Set to BULK erase mode
Store data to any EEPROM address (for
valid EEPROM address see memory map
for each device)
EELAT = 1, EPGM = 1, ERASE = 1
Turn on high voltage
Delay 10 ms
Turn off high voltage and set
to READ mode
ROW = 1, ERASE = 1, EELAT = 1
Set to ROW erase mode
Write any data to any address in ROW
ROW = 1, ERASE = 1, EELAT = 1, EPGM = 1
Turn on high voltage
Delay 10 ms
Turn off high voltage and set
to READ mode
M68HC11E Family Data Sheet, Rev. 5.1
Freescale Semiconductor