MC68HC711E9CFNE2 Freescale Semiconductor, MC68HC711E9CFNE2 Datasheet - Page 102

• Manufacturer Part Number: MC68HC711E9CFNE2
• Description: IC MCU 8BIT 512RAM 52-PLC
• Manufacturer: Freescale Semiconductor
• Series: HC11r

Specifications of MC68HC711E9CFNE2

• Core Processor: HC11
• Core Size: 8-Bit
• Speed: 2MHz
• Connectivity: SCI, SPI
• Peripherals: POR, WDT
• Number Of I /o: 38
• Program Memory Size: 12KB (12K x 8)
• Program Memory Type: OTP
• Eeprom Size: 512 x 8
• Ram Size: 512 x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 52-PLCC
• Processor Series: HC711E
• Core: HC11
• Data Bus Width: 8 bit
• Data Ram Size: 512 B
• Interface Type: SCI, SPI
• Maximum Clock Frequency: 2 MHz
• Number Of Programmable I/os: 38
• Number Of Timers: 8
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 8 bit
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Operating Modes and On-Chip Memory
Technical Data
102
ERASE — Erase Mode Select Bit
EELAT — EEPROM Latch Control Bit
EPGM — EPROM/OTPROM/EEPROM Programming Voltage
During EEPROM programming, the ROW and BYTE bits of PPROG are
not used. If the frequency of the E clock is 1 MHz or less, set the CSEL
bit in the OPTION register. Recall that 0s must be erased by a separate
erase operation before programming. The following examples of how to
program an EEPROM byte assume that the appropriate bits in BPROT
are cleared.
PROG
0 = Normal read or program mode
1 = Erase mode
0 = EEPROM address and data bus configured for normal reads
1 = EEPROM address and data bus configured for programming or
0 = Programming voltage to EEPROM array switched off
1 = Programming voltage to EEPROM array switched on
Operating Modes and On-Chip Memory
and cannot be programmed
erasing and cannot be read
Enable Bit
LDAB
STAB
STAA
LDAB
STAB
JSR
CLR
BYTE
0
0
1
1
#$02
$103B
$XXXX
#$03
$103B
DLY10
$103B
Table 4-8. EEPROM Erase
ROW
0
1
0
1
EELAT = 1
Set EELAT bit
Store data to EEPROM address
(for valid EEPROM address see memory
map for each device)
EELAT = 1, EPGM = 1
Turn on programming voltage
Delay 10 ms
Turn off high voltage and set
to READ mode
Bulk erase (entire array)
Row erase (16 bytes)
Byte erase
Byte erase
Action
M68HC11E Family — Rev. 3.2
MOTOROLA