MC68HC711E9CFNE2 Freescale Semiconductor, MC68HC711E9CFNE2 Datasheet - Page 103

• Manufacturer Part Number: MC68HC711E9CFNE2
• Description: IC MCU 8BIT 512RAM 52-PLC
• Manufacturer: Freescale Semiconductor
• Series: HC11r

Specifications of MC68HC711E9CFNE2

• Core Processor: HC11
• Core Size: 8-Bit
• Speed: 2MHz
• Connectivity: SCI, SPI
• Peripherals: POR, WDT
• Number Of I /o: 38
• Program Memory Size: 12KB (12K x 8)
• Program Memory Type: OTP
• Eeprom Size: 512 x 8
• Ram Size: 512 x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 52-PLCC
• Processor Series: HC711E
• Core: HC11
• Data Bus Width: 8 bit
• Data Ram Size: 512 B
• Interface Type: SCI, SPI
• Maximum Clock Frequency: 2 MHz
• Number Of Programmable I/os: 38
• Number Of Timers: 8
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 8 bit
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

4.6.1.3 EEPROM Bulk Erase
4.6.1.4 EEPROM Row Erase
M68HC11E Family — Rev. 3.2
MOTOROLA
This is an example of how to bulk erase the entire EEPROM. The
CONFIG register is not affected in this example.
This example shows how to perform a fast erase of large sections of
EEPROM.
BULKE
ROWE
Operating Modes and On-Chip Memory
LDAB
STAB
STAA
LDAB
STAB
JSR
CLR
LDAB
STAB
STAB
LDAB
STAB
JSR
CLR
#$06
$103B
$XXXX
#$07
$103B
DLY10
$103B
#$0E
$103B
0,X
#$0F
$103B
DLY10
$103B
EELAT = 1, ERASE = 1
Set to BULK erase mode
Store data to any EEPROM address (for
valid EEPROM address see memory map
for each device)
EELAT = 1, EPGM = 1, ERASE = 1
Turn on high voltage
Delay 10 ms
Turn off high voltage and set
to READ mode
ROW = 1, ERASE = 1, EELAT = 1
Set to ROW erase mode
Write any data to any address in ROW
ROW = 1, ERASE = 1, EELAT = 1, EPGM = 1
Turn on high voltage
Delay 10 ms
Turn off high voltage and set
to READ mode
Operating Modes and On-Chip Memory
Technical Data
EEPROM
103