HD64F2638F20J Renesas Electronics America, HD64F2638F20J Datasheet - Page 820
HD64F2638F20J
Manufacturer Part Number
HD64F2638F20J
Description
IC H8S MCU FLASH 256K 128-QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2600r
Specifications of HD64F2638F20J
Core Processor
H8S/2600
Core Size
16-Bit
Speed
20MHz
Connectivity
CAN, SCI, SmartCard
Peripherals
Motor Control PWM, POR, PWM, WDT
Number Of I /o
72
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
16K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 12x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
128-QFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
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Section 21A ROM
(H8S/2636 Group)
To select user program mode, select a mode that enables the on-chip flash memory (mode 6 or 7),
and apply a high level to the FWE pin. In this mode, on-chip supporting modules other than flash
memory operate as they normally would in modes 6 and 7.
The flash memory itself cannot be read while the SWE bit is set to 1 to perform programming or
erasing, so the control program that performs programming and erasing should be run in on-chip
RAM or external memory. If the program is to be located in external memory, the instruction for
writing to flash memory, and the following instruction, should be placed in on-chip RAM.
Figure 21A-10 shows the procedure for executing the program/erase control program when
transferred to on-chip RAM.
Page 770 of 1458
Notes: Do not apply a constant high level to the FWE pin. Apply a high level to the FWE pin
only when the flash memory is programmed or erased. Also, while a high level is
applied to the FWE pin, the watchdog timer should be activated to prevent
overprogramming or overerasing due to program runaway, etc.
* For precautions on applying and disconnecting FWE, see section 21A.15, Flash
Memory Programming and Erasing Precautions.
Figure 21A-10 User Program Mode Execution Procedure
Write the FWE assessment program and
transfer program (and the program/erase
control program if necessary) beforehand
Branch to flash memory application
program (flash memory rewriting)
Branch to program/erase control
Transfer program/erase control
Execute program/erase control
MD2, MD1, MD0 = 110, 111
program in RAM area
program to RAM
FWE = high*
Clear FWE
Reset-start
program
H8S/2639, H8S/2638, H8S/2636,
REJ09B0103-0800 Rev. 8.00
H8S/2630, H8S/2635 Group
May 28, 2010
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