HD64F2638F20J Renesas Electronics America, HD64F2638F20J Datasheet - Page 839

• Manufacturer Part Number: HD64F2638F20J
• Description: IC H8S MCU FLASH 256K 128-QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2600r

Specifications of HD64F2638F20J

• Core Processor: H8S/2600
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: CAN, SCI, SmartCard
• Peripherals: Motor Control PWM, POR, PWM, WDT
• Number Of I /o: 72
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 16K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 12x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 128-QFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

H8S/2639, H8S/2638, H8S/2636,
H8S/2630, H8S/2635 Group
2. In a power-down state, FLMCR1, FLMCR2, EBR1, EBR2, RAMER, and FLPWCR cannot be
21A.15 Flash Memory Programming and Erasing Precautions
Precautions concerning the use of on-board programming mode, the RAM emulation function, and
programmer mode are summarized below.
1. Use the specified voltages and timing for programming and erasing.
2. Powering on and off (see figures 21A-18 to 21A-20)
3. FWE application/disconnection (see figures 21A-18 to 21A-20)
REJ09B0103-0800 Rev. 8.00
May 28, 2010
read from or written to.
Applied voltages in excess of the rating can permanently damage the device. Use a PROM
programmer that supports the Renesas Electronics microcomputer device type with 128-kbyte
on-chip flash memory.
Only use the specified socket adapter. Failure to observe these points may result in damage to
the device.
Do not apply a high level to the FWE pin until V
low before turning off V
When applying or disconnecting V
in the hardware protection state.
The power-on and power-off timing requirements should also be satisfied in the event of a
power failure and subsequent recovery.
FWE application should be carried out when MCU operation is in a stable condition. If MCU
operation is not stable, fix the FWE pin low and set the protection state.
The following points must be observed concerning FWE application and disconnection to
prevent unintentional programming or erasing of flash memory:
•
•
•
•
Apply FWE when the V
Apply FWE when oscillation has stabilized (after the elapse of the oscillation settling
time).
In boot mode, apply and disconnect FWE during a reset.
In user program mode, FWE can be switched between high and low level regardless of a
reset state.
FWE input can also be switched during execution of a program in flash memory.
Do not apply FWE if program runaway has occurred.
CC
.
CC
voltage has stabilized within its rated voltage range.
CC
power, fix the FWE pin low and place the flash memory
CC
has stabilized. Also, drive the FWE pin
Section 21A ROM
(H8S/2636 Group)
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