HD64F2638F20J Renesas Electronics America, HD64F2638F20J Datasheet - Page 840

IC H8S MCU FLASH 256K 128-QFP

HD64F2638F20J

Manufacturer Part Number
HD64F2638F20J
Description
IC H8S MCU FLASH 256K 128-QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2600r
Datasheets

Specifications of HD64F2638F20J

Core Processor
H8S/2600
Core Size
16-Bit
Speed
20MHz
Connectivity
CAN, SCI, SmartCard
Peripherals
Motor Control PWM, POR, PWM, WDT
Number Of I /o
72
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
16K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 12x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
128-QFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HD64F2638F20J
Manufacturer:
PENESAS
Quantity:
252
Section 21A ROM
(H8S/2636 Group)
4. Do not apply a constant high level to the FWE pin.
5. Use the recommended algorithm when programming and erasing flash memory.
6. Do not set or clear the SWE bit during execution of a program in flash memory.
7. Do not use interrupts while flash memory is being programmed or erased.
8. Do not perform additional programming. Erase the memory before reprogramming.
Page 790 of 1458
Apply a high level to the FWE pin only when programming or erasing flash memory. A
system configuration in which a high level is constantly applied to the FWE pin should be
avoided. Also, while a high level is applied to the FWE pin, the watchdog timer should be
activated to prevent overprogramming or overerasing due to program runaway, etc.
The recommended algorithm enables programming and erasing to be carried out without
subjecting the device to voltage stress or sacrificing program data reliability. When setting the
P or E bit in FLMCR1, the watchdog timer should be set beforehand as a precaution against
program runaway, etc.
Do not set or clear the SWE bit during execution of a program in flash memory. Wait for at
least 100 µs after clearing the SWE bit before executing a program or reading data in flash
memory. When the SWE bit is set, data in flash memory can be rewritten, but when SWE = 1,
flash memory can only be read in program-verify or erase-verify mode. Access flash memory
only for verify operations (verification during programming/erasing). Do not clear the SWE bit
during programming, erasing, or verifying.
Similarly, when using the RAM emulation function while a high level is being input to the
FWE pin, the SWE bit must be cleared before executing a program or reading data in flash
memory. However, the RAM area overlapping flash memory space can be read and written to
regardless of whether the SWE bit is set or cleared.
All interrupt requests, including NMI, should be disabled during FWE application to give
priority to program/erase operations.
In on-board programming, perform only one programming operation on a 128-byte
programming unit block. In programmer mode, also, perform only one programming operation
on a 128-byte programming unit block. Further programming must only be executed after this
programming unit block has been erased.
Disconnect FWE only when the SWE, ESU, PSU, EV, PV, P, and E bits in FLMCR1 are
cleared.
Make sure that the SWE, ESU, PSU, EV, PV, P, and E bits are not set by mistake when
applying or disconnecting FWE.
H8S/2639, H8S/2638, H8S/2636,
REJ09B0103-0800 Rev. 8.00
H8S/2630, H8S/2635 Group
May 28, 2010

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