MC68HC11E1CFN2 Freescale Semiconductor, MC68HC11E1CFN2 Datasheet - Page 60

• Manufacturer Part Number: MC68HC11E1CFN2
• Description: IC MCU 512 EEPROM 2MHZ 52-PLCC
• Manufacturer: Freescale Semiconductor
• Series: HC11r

Specifications of MC68HC11E1CFN2

• Core Processor: HC11
• Core Size: 8-Bit
• Speed: 2MHz
• Connectivity: SCI, SPI
• Peripherals: POR, WDT
• Number Of I /o: 38
• Program Memory Type: ROMless
• Eeprom Size: 512 x 8
• Ram Size: 512 x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 52-PLCC
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Program Memory Size: -

Operating Modes and On-Chip Memory
2.5.1.3 EEPROM Bulk Erase
2.5.1.4 EEPROM Row Erase
Data Sheet
60
EPGM — EPROM/OTPROM/EEPROM Programming Voltage Enable Bit
During EEPROM programming, the ROW and BYTE bits of PPROG are not used.
If the frequency of the E clock is 1 MHz or less, set the CSEL bit in the OPTION
register. Recall that 0s must be erased by a separate erase operation before
programming. The following examples of how to program an EEPROM byte
assume that the appropriate bits in BPROT are cleared.
This is an example of how to bulk erase the entire EEPROM. The CONFIG register
is not affected in this example.
This example shows how to perform a fast erase of large sections of EEPROM.
PROG
BULKE
ROWE
0 = Programming voltage to EEPROM array switched off
1 = Programming voltage to EEPROM array switched on
Freescale Semiconductor, Inc.
For More Information On This Product,
LDAB
STAB
STAA
LDAB
STAB
JSR
CLR
LDAB
STAB
STAA
LDAB
STAB
JSR
CLR
LDAB
STAB
STAB
LDAB
STAB
JSR
CLR
Operating Modes and On-Chip Memory
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#$02
$103B
$XXXX
#$03
$103B
DLY10
$103B
#$06
$103B
$XXXX
#$07
$103B
DLY10
$103B
#$0E
$103B
0,X
#$0F
$103B
DLY10
$103B
EELAT = 1
Set EELAT bit
Store data to EEPROM address
(for valid EEPROM address see memory
map for each device)
EELAT = 1, EPGM = 1
Turn on programming voltage
Delay 10 ms
Turn off high voltage and set
to READ mode
EELAT = 1, ERASE = 1
Set to BULK erase mode
Store data to any EEPROM address (for
valid EEPROM address see memory map
for each device)
EELAT = 1, EPGM = 1, ERASE = 1
Turn on high voltage
Delay 10 ms
Turn off high voltage and set
to READ mode
ROW = 1, ERASE = 1, EELAT = 1
Set to ROW erase mode
Write any data to any address in ROW
ROW = 1, ERASE = 1, EELAT = 1, EPGM = 1
Turn on high voltage
Delay 10 ms
Turn off high voltage and set
to READ mode
M68HC11E Family — Rev. 5
MOTOROLA