MC68HC908QY2CDW Freescale Semiconductor, MC68HC908QY2CDW Datasheet - Page 163

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MC68HC908QY2CDW

Manufacturer Part Number
MC68HC908QY2CDW
Description
IC MCU 1.5K FLASH W/ADC 16-SOIC
Manufacturer
Freescale Semiconductor
Series
HC08r
Datasheet

Specifications of MC68HC908QY2CDW

Core Processor
HC08
Core Size
8-Bit
Speed
8MHz
Peripherals
LVD, POR, PWM
Number Of I /o
13
Program Memory Size
1.5KB (1.5K x 8)
Program Memory Type
FLASH
Ram Size
128 x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 4x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
16-SOIC (0.300", 7.5mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Connectivity
-
16.16 Memory Characteristics
Freescale Semiconductor
RAM data retention voltage
FLASH program bus clock frequency
FLASH read bus clock frequency
FLASH page erase time
FLASH mass erase time
FLASH PGM/ERASE to HVEN setup time
FLASH high-voltage hold time
FLASH high-voltage hold time (mass erase)
FLASH program hold time
FLASH program time
FLASH return to read time
FLASH cumulative program HV period
FLASH endurance
FLASH data retention time
1. f
2. t
3. t
4. Typical endurance was evaluated for this product family. For additional information on how Freescale defines Typical
5. Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated
<1 k cycles
>1 k cycles
clearing HVEN to 0.
t
Endurance, please refer to Engineering Bulletin EB619.
to 25•C using the Arrhenius equation. For additional information on how Freescale defines Typical Data Retention, please
refer to Engineering Bulletin EB618.
Read
RCV
HV
HV
is defined as the cumulative high voltage programming time to the same row before next erase.
must satisfy this condition: t
is defined as the time it needs before the FLASH can be read after turning off the high voltage charge pump, by
is defined as the frequency range for which the FLASH memory can be read.
(4)
Characteristic
(5)
NVS
MC68HC908QY/QT Family Data Sheet, Rev. 6
+ t
NVH
+ t
PGS
+ (t
PROG
x 32) ≤ t
Symbol
f
t
HV
t
Read
t
MErase
V
t
t
RCV
t
PROG
t
t
t
Erase
NVHL
HV
NVH
PGS
NVS
RDR
maximum.
(3)
(2)
(1)
10 k
Min
100
1.3
0.9
3.6
10
30
15
1
0
4
5
5
1
100 k
Typ
100
1
4
Memory Characteristics
Max
8 M
1.1
5.5
40
4
Cycles
Years
MHz
Unit
ms
ms
ms
Hz
μs
μs
μs
μs
μs
μs
V
163

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