MC68HC711P2CFN4 Freescale Semiconductor, MC68HC711P2CFN4 Datasheet - Page 68

• Manufacturer Part Number: MC68HC711P2CFN4
• Description: IC MCU 32K OTP 4MHZ 84-PLCC
• Manufacturer: Freescale Semiconductor
• Series: HC11r

Specifications of MC68HC711P2CFN4

• Core Processor: HC11
• Core Size: 8-Bit
• Speed: 4MHz
• Connectivity: MI Bus, SCI, SPI
• Peripherals: POR, PWM, WDT
• Number Of I /o: 50
• Program Memory Size: 32KB (32K x 8)
• Program Memory Type: OTP
• Eeprom Size: 640 x 8
• Ram Size: 1K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 84-PLCC
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Operating Modes and On-Chip Memory
3.6.2.2 EEPROM bulk erase
Technical Data
EELAT — EEPROM latch control
EEPGM — EEPROM program command
PROG
To erase the EEPROM, ensure that the proper bits of the BPROT
register are cleared, then complete the following steps using the PPROG
register:
1. Write to PPROG with the ERASE, EELAT and appropriate BYTE
2. Write to the appropriate EEPROM address with any data. Row
3. Write to PPROG with ERASE, EELAT, EEPGM and the
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When the EELAT bit is cleared, the EEPROM can be read as if it were
a ROM. The block protect register has no effect during reads.
During EEPROM programming, the ROW and BYTE bits of PPROG
are not used. If the frequency of the E clock is 1MHz or less, set the
CSEL bit in the OPTION register. Remember that zeros must be
erased by a separate erase operation before programming. The
following example of how to program an EEPROM byte assumes that
the appropriate bits in BPROT have been cleared.
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1 = EEPROM address and data bus set up for programming or
0 = EEPROM address and data bus set up for normal reads.
1 = Program or erase voltage switched on to EEPROM array.
0 = Program or erase voltage switched off to EEPROM array.
and ROW bits set.
erase only requires a write to any location in the row. Bulk erase
is accomplished by writing to any location in the array.
appropriate BYTE and ROW bits set.
Operating Modes and On-Chip Memory
LDAB
STAB
STAA
LDAB
STAB
JSR
CLR
erasing.
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EELAT=1
Set EELAT bit
Store data to EEPROM address
EELAT=EEPGM=1
Turn on programming voltage
Delay 10 ms
Turn off high voltage and set to READ mode
MC68HC11P2 — Rev 1.0