TS912IDT STMicroelectronics, TS912IDT Datasheet - Page 9

IC OP AMP R-R DUAL 8-SOIC

TS912IDT

Manufacturer Part Number
TS912IDT
Description
IC OP AMP R-R DUAL 8-SOIC
Manufacturer
STMicroelectronics
Datasheet

Specifications of TS912IDT

Amplifier Type
General Purpose
Number Of Circuits
2
Output Type
Rail-to-Rail
Slew Rate
1.3 V/µs
Gain Bandwidth Product
1.4MHz
Current - Input Bias
1pA
Voltage - Input Offset
10000µV
Current - Supply
400µA
Current - Output / Channel
75mA
Voltage - Supply, Single/dual (±)
2.7 V ~ 16 V, ±1.35 V ~ 8 V
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Number Of Channels
2
Common Mode Rejection Ratio (min)
60 dB
Input Offset Voltage
10 mV
Input Bias Current (max)
150 pA
Operating Supply Voltage
3 V, 5 V, 9 V, 12 V, 15 V
Supply Current
0.7 mA
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Dual Supply Voltage
+/- 3 V, +/- 5 V
Maximum Dual Supply Voltage
+/- 8 V
Minimum Dual Supply Voltage
+/- 1.35 V
Mounting Style
SMD/SMT
Shutdown
No
Supply Voltage (max)
16 V
Supply Voltage (min)
2.7 V
Technology
CMOS
Voltage Gain Db
92.04 dB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
-3db Bandwidth
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-6618-2
TS912IDT

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TS912, TS912A, TS912B
Table 5.
1. Maximum values include unavoidable inaccuracies of the industrial tests.
Symbol
THD
SR
SR
C
φm
en
in
+
-
Slew rate
(A
Slew rate
(A
Phase margin
Equivalent input noise voltage (R
Total harmonic distortion
(A
f = 1 kHz)
Input capacitance
VCL
VCL
VCL
V
specified) (continued)
CC+
= 1, R
= 1, R
= 1, R
= 10 V, V
L
L
L
= 10 kΩ , C
= 10 kΩ , C
= 10 kΩ , C
CC-
= 0 V, R
L
L
L
= 100 pF, V
= 100 pF, V
= 100 pF, V
Parameter
L
s
, C
= 100 Ω , f = 1 kHz)
Doc ID 2325 Rev 6
L
i
i
o
= 2.5 V to 7.5 V)
= 2.5 V to 7.5 V)
= 4.75 V to 5.25 V,
connected to V
CC
/2, T
amb
Min.
= 25°C (unless otherwise
Electrical characteristics
Typ.
0.02
1.3
0.8
1.5
40
30
Max.
Degrees
nV/√Hz
Unit
V/μs
V/μs
pF
%
9/20

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