THS4304DGKR | |
|---|---|
| Manufacturer Part Number | THS4304DGKR |
| Description | IC OPAMP VFB 870MHZ SGL 8MSOP |
| Manufacturer | Texas Instruments |
| THS4304DGKR datasheets |
|
Availability: By request
International delivery:
Warranty: 60 days
×
- We provide standard 60-days warranty for all parts. If warranty differs we always mention it beforehand. In case of return we cover shipping costs.
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Specifications of THS4304DGKR | |||
|---|---|---|---|
| Amplifier Type | Voltage Feedback | Number Of Circuits | 1 |
| Slew Rate | 830 V/µs | Gain Bandwidth Product | 870MHz |
| -3db Bandwidth | 3GHz | Current - Input Bias | 7µA |
| Voltage - Input Offset | 500µV | Current - Supply | 18mA |
| Current - Output / Channel | 140mA | Voltage - Supply, Single/dual (±) | 2.7 V ~ 5 V, ±1.35 V ~ 2.5 V |
| Operating Temperature | -40°C ~ 85°C | Mounting Type | Surface Mount |
| Package / Case | 8-MSOP, Micro8™, 8-uMAX, 8-uSOP, | For Use With | 296-18854 - EVAL MODULE FOR THS4304DGK296-18853 - EVAL MODULE FOR THS4304DBV |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | Output Type | - |
PrevNext
THS4304
SLOS436A – MARCH 2004 – REVISED JULY 2004
ELECTRICAL CHARACTERISTICS
Specifications: V
= 5 V: R
= 249
, R
S
F
PARAMETER
AC PERFORMANCE
G = +1, V
G = +2, V
Small-Signal Bandwidth
G = +5, V
G = +10, V
Gain Bandwidth Product
G >+10
0.1-dB Flat Bandwidth
G= +2, V
C
= 0.5 pF
F
Large-Signal Bandwidth
G = +2, V
G = +2, V
Slew Rate
G = +2, V
Settling Time to 1%
G = –2, V
Settling Time to 0.1%
G = –2, V
Settling Time to 0.01%
G = –2, V
Rise / Fall Times
G = +2, V
Harmonic Distortion
Second Harmonic Distortion
G = +2,
V
= 2 V
O
f = 10 MHz
Third Harmonic Distortion
Third-Order Intermodulation
G = +2, V
Distortion (IMD
)
3
200-kHz tone spacing,
Third-Order Output Intercept
f = 20 MHz
(OIP
)
3
Noise Figure
G = +2, f = 1 GHz
Input Voltage Noise
f = 1 MHz
Input Current Noise
f = 1 MHz
DC PERFORMANCE
Open-Loop Voltage Gain
V
=
0.8 V, V
O
(A
)
OL
Input Offset Voltage
Input Offset Voltage Drift
Input Bias Current
V
= 2.5 V
CM
Input Bias Current Drift
Input Offset Current
Input Offset Current Drift
INPUT CHARACTERISTICS
Common-Mode Input Range
Common-Mode Rejection
V
=
0.2 V, V
O
Ratio
Input Resistance
Each input, referenced to GND
Input Capacitance
(1) Test levels: (A) 100% tested at 25 C. Over temperature limits by characterization and simulation. (B) Limits set by characterization and
simulation. (C) Typical value only for information.
4
= 100
, and G = +2 unless otherwise noted
L
TYP
CONDITIONS
25 C
25 C
= 100 mVpp
3
O
= 100 mVpp
1
O
= 100 mVpp
187
O
= 100 mVpp
87
O
870
= 100 mVpp,
300
O
= 2 V
240
O
PP
= 1-V Step
830
O
= 2-V Step
790
O
= 2-V Step
4.5
O
= 2-V Step
7.5
O
= 2-V Step
35
O
= 2-V Step
2.5
O
R
= 100
–84
L
R
= 1 k
–95
L
,
PP
R
= 100
–100
L
R
= 1 k
–100
L
–84
= 2-V
envelope,
O
PP
48
15
2.4
2.1
= 2.5 V
65
54
CM
0.5
4
7
12
0.5
1
–0.2 to
0.2 to
5.2
4.8
= 2.5 V
95
80
CM
100
1.5
www.ti.com
OVER TEMPERATURE
0 C to
–40 C to
MIN/
LEVEL
UNITS
70 C
85 C
MAX
GHz
Typ
GHz
Typ
MHz
Typ
MHz
Typ
MHz
Typ
MHz
Typ
MHz
Typ
V/ s
Typ
V/ s
Typ
ns
Typ
ns
Typ
ns
Typ
ns
Typ
dBc
Typ
dBc
Typ
dBc
Typ
dBc
Typ
dBc
Typ
dBm
Typ
dB
Typ
nV/ Hz
Typ
pA/ Hz
Typ
50
50
dB
Min
5
5
mV
Max
5
5
V/ C
Typ
18
18
A
Max
50
50
nA/ C
Typ
1.2
1.2
µA
Max
10
10
nA/ C
Typ
0.4 to
0.4 to
V
Min
4.6
4.6
73
73
dB
Min
k
Typ
pF
Typ
TEST
(1)
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
A
A
B
A
B
A
B
A
A
C
C
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