TISP3082F3P Bourns Inc., TISP3082F3P Datasheet

SURGE SUPP 66V BIDIR 8-DIP

TISP3082F3P

Manufacturer Part Number
TISP3082F3P
Description
SURGE SUPP 66V BIDIR 8-DIP
Manufacturer
Bourns Inc.
Datasheets
1.TISP3072F3DR.pdf (12 pages)
2.TISP3072F3P.pdf (16 pages)

Specifications of TISP3082F3P

Package / Case
8-DIP
Voltage - Breakover
82V
Voltage - Off State
66V
Voltage - On State
3V
Current - Peak Pulse (8 X 20µs)
70A
Current - Peak Pulse (10 X 1000µs)
35A
Current - Hold (ih)
150mA
Number Of Elements
2
Capacitance
85pF
Breakover Current Ibo Max
5.7 A
Rated Repetitive Off-state Voltage Vdrm
66 V
Off-state Leakage Current @ Vdrm Idrm
0.01 mA
Forward Voltage Drop
3 V
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
These low-voltage dual bidirectional thyristor protectors are
designed to protect ISDN applications against transients caused
by lightning strikes and a.c. power lines. Offered in two voltage
variants to meet battery and protection requirements, they are
guaranteed to suppress and withstand the listed international
lightning surges in both polarities. Transients are initially clipped
by breakdown clamping until the voltage rises to the breakover
level, which causes the device to crowbar. The high crowbar
holding current prevents d.c. latchup as the current subsides.
These monolithic protection devices are fabricated in
ion-implanted planar structures to ensure precise and matched
breakover control and are virtually transparent to the system in
normal operation.
Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
Planar Passivated Junctions
Low Off-State Current <10
Rated for International Surge Wave Shapes
TISP30xxF3 D, Small-outline Tape And Reeled
Description
How To Order
Insert xx value corresponding to protection voltages of 72 and 82
Device
Waveshape
DEVICE
‘3072F3
‘3082F3
10/1000 µs
10/160 µs
10/700 µs
10/560 µs
.............................................. UL Recognized Component
2/10 µs
8/20 µs
Package
V
DRM
58
66
V
GR-1089-CORE
GR-1089-CORE
IEC 61000-4-5
ITU-T K.20/21
FCC Part 68
FCC Part 68
FCC Part 68
Standard
V
µ
(BO)
72
82
V
A
Carrier
I
TSP
80
70
60
35
50
45
A
TISP30xxF3 (LV) Overvoltage Protector Series
TISP30xxF3DR-S
Order As
LOW-VOLTAGE DUAL BIDIRECTIONAL THYRISTOR
D Package (Top View)
Device Symbol
Customers should verify actual device performance in their specific applications.
Terminals T, R and G correspond to the
alternative line designators of A, B and C
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
NC
NC
NC - No internal connection
R
T
OVERVOLTAGE PROTECTORS
Specifications are subject to change without notice.
T
1
2
3
4
TISP3072F3,TISP3082F3
G
MARCH 1994 - REVISED SEPTEMBER 2008
SD3XAA
5
8
7
6
R
G
G
G
G

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TISP3082F3P Summary of contents

Page 1

Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge V V DRM (BO) DEVICE V V ‘3072F3 58 72 ‘3082F3 66 82 Planar Passivated Junctions µ Low Off-State Current <10 A Rated for International Surge Wave Shapes ...

Page 2

TISP30xxF3 (LV) Overvoltage Protector Series Absolute Maximum Ratings Repetitive peak off-state voltage, 0 °C < T Non-repetitive peak on-state pulse current (see Notes 1 and 2) 1/2 (Gas tube differential transient, 1/2 voltage wave shape) 2/10 ...

Page 3

TISP30xxF3 (LV) Overvoltage Protector Series Electrical Characteristics for T and and G Terminals Parameter Repetitive peak off ±V DRM D state current V Breakover voltage dv/dt = ±250 V/ms, R ...

Page 4

TISP30xxF3 (LV) Overvoltage Protector Series Parameter Measurement Information V (BR)M V DRM - (BR) DRM V (BR) I (BO) V (BO) Quadrant III Switching Characteristic Figure 1. Voltage-Current Characteristics for any Terminal Pair MARCH 1994 - REVISED SEPTEMBER ...

Page 5

TISP30xxF3 (LV) Overvoltage Protector Series Typical Characteristics - R and and G Terminals OFF-STATE CURRENT vs JUNCTION TEMPERATURE 100 10 1 0·1 0·01 0·001 - Junction Temperature - °C J Figure 2. ...

Page 6

TISP30xxF3 (LV) Overvoltage Protector Series Typical Characteristics - R and and G Terminals HOLDING CURRENT & BREAKOVER CURRENT vs JUNCTION TEMPERATURE 1.0 0.9 0.8 0.7 0.6 0.5 I (BO) 0.4 0 0.2 0.1 -25 0 ...

Page 7

TISP30xxF3 (LV) Overvoltage Protector Series Typical Characteristics - R and and G Terminals 1000 SURGE CURRENT vs DECAY TIME 100 100 Decay Time - µs Figure 10. Customers should verify actual device performance in ...

Page 8

TISP30xxF3 (LV) Overvoltage Protector Series Typical Characteristics - R and T Terminals OFF-STATE CURRENT vs JUNCTION TEMPERATURE 100 V = ± 0·1 0·01 0·001 - Junction Temperature - °C J Figure ...

Page 9

TISP30xxF3 (LV) Overvoltage Protector Series Thermal Information MAXIMUM NON-RECURRING 50 Hz CURRENT vs CURRENT DURATION 0· Current Duration - s Figure 14. TI3LAA = 250 Vrms GEN 100 = 10 to 150 ...

Page 10

TISP30xxF3 (LV) Overvoltage Protector Series Electrical Characteristics The electrical characteristics of a TISP ® device are strongly dependent on junction temperature Hence, a characteristic value will depend on the junction temperature at the instant of measurement. The ...

Page 11

TISP30xxF3 (LV) Overvoltage Protector Series Protection Voltage The protection voltage, (V (BO) ), increases under lightning surge conditions due to thyristor regeneration. This increase is dependent on the rate of current rise, di/dt, when the TISP ® device is clamping ...

Page 12

TISP30xxF3 (LV) Overvoltage Protector Series Longitudinal Balance Figure 17 shows a three terminal TISP ® device with its equivalent “delta” capacitance. Each capacitance and the true terminal pair capacitance measured with ...

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