TISP4300H3LM Bourns Inc., TISP4300H3LM Datasheet

SURGE SUPP THYRISTOR 230V TO-92

TISP4300H3LM

Manufacturer Part Number
TISP4300H3LM
Description
SURGE SUPP THYRISTOR 230V TO-92
Manufacturer
Bourns Inc.
Datasheets

Specifications of TISP4300H3LM

Package / Case
TO-92-2, TO-226AC
Voltage - Breakover
300V
Voltage - Off State
230V
Voltage - On State
3V
Current - Peak Pulse (8 X 20µs)
300A
Current - Peak Pulse (10 X 1000µs)
100A
Current - Hold (ih)
150mA
Number Of Elements
1
Capacitance
62pF
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TISP4300H3LM
Manufacturer:
BOURNS
Quantity:
45 000
Rated for International Surge Wave Shapes
Low Differential Capacitance .................................. 67 pF max.
These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by a.c. power system or lightning
flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used
for the protection of 2-wire telecommunication equipment (e.g., between the Ring and Tip wires for telephones and modems). Combinations of
devices can be used for multi-point protection (e.g., 3-point protection between Ring, Tip and Ground).
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until
the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the
current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup as the
diverted current subsides.
ITU-T K.20/21 Rating ........................ 8 kV 10/700, 200 A 5/310
High Holding Current ........................................... 225 mA min.
Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
Insert xxx value corresponding to protection voltages of 165 through to 350.
TISP4xxxH4BJ
Description
How To Order
Waveshape
10/1000 µs
Device
Device
10/160 µs
10/700 µs
10/560 µs
.............................................. UL Recognized Component
‘4165
‘4180
‘4200
‘4265
‘4300
‘4350
2/10 µs
8/20 µs
BJ (J-Bend DO-214AA/SMB)
V
135
145
155
200
230
275
GR-1089-CORE
GR-1089-CORE
DRM
IEC 61000-4-5
V
ITU-T K.20/21
FCC Part 68
FCC Part 68
Standard
Package
V
165
180
200
265
300
350
(BO)
V
I
500
300
250
200
160
100
TSP
A
TISP4xxxH4BJ Overvoltage Protector Series
Embossed Tape Reeled
Bulk Pack
Carrier
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
TISP4xxxH4BJR-S
TISP4xxxH4BJ-S
SMBJ Package (Top View)
Device Symbol
Customers should verify actual device performance in their specific applications.
Order As
TISP4165H4BJ THRU TISP4200H4BJ,
Terminals T and R correspond to the
alternative line designators of A and B
TISP4265H4BJ THRU TISP4350H4BJ
R(B)
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
1
Specifications are subject to change without notice.
HIGH HOLDING CURRENT
NOVEMBER 1997 - REVISED JANUARY 2007
T
R
SD4XAA
2
T(A)
MDXXBG

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TISP4300H3LM Summary of contents

Page 1

ITU-T K.20/21 Rating ........................ 8 kV 10/700, 200 A 5/310 High Holding Current ........................................... 225 mA min. Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge V V DRM (BO) Device V V ‘4165 135 165 ‘4180 ...

Page 2

TISP4xxxH4BJ Overvoltage Protector Series Description This TISP4xxxH4BJ range consists of six voltage variants to meet various maximum system voltage levels (135 V to 275 V). They are guaran- teed to voltage limit and withstand the listed international lightning surges in ...

Page 3

TISP4xxxH4BJ Overvoltage Protector Series ° Electrical Characteristics Parameter Repetitive peak off DRM D state current V Breakover voltage dv/dt = ±750 V/ms, R (BO) dv/dt ≤ ±1000 V/µs, Linear voltage ramp, Impulse ...

Page 4

TISP4xxxH4BJ Overvoltage Protector Series Parameter Measurement Information V DRM -v I DRM I (BO) V (BO) Quadrant III Switching Characteristic Figure 1. Voltage-current Characteristic for T and R Terminals All Measurements are Referenced to the R Terminal NOVEMBER 1997 - ...

Page 5

TISP4xxxH4BJ Overvoltage Protector Series Typical Characteristics OFF-STATE CURRENT vs JUNCTION TEMPERATURE 100 V = ± 0·1 0·01 0·001 - Junction Temperature - °C J Figure 2. ON-STATE CURRENT vs ON-STATE VOLTAGE ...

Page 6

TISP4xxxH4BJ Overvoltage Protector Series Typical Characteristics NORMALIZED CAPACITANCE vs OFF-STATE VOLTAGE 1 0.9 0.8 0.7 0.6 0.5 '4265 THRU '4350 0.4 0.3 0.2 0 Off-state Voltage - V D Figure 6. NOVEMBER 1997 ...

Page 7

TISP4xxxH4BJ Overvoltage Protector Series Typical Characteristics NON-REPETITIVE PEAK ON-STATE CURRENT vs CURRENT DURATION 600 Vrms, 50/60 Hz GEN R = 1.4*V 20 GEN EIA/JESD51-2 ENVIRONMENT 15 EIA/JESD51-3 PCB ° ...

Page 8

TISP4xxxH4BJ Overvoltage Protector Series Deployment These devices are two terminal overvoltage protectors. They may be used either singly to limit the voltage between two conductors (Figure 12 multiples to limit the voltage at several points in a circuit ...

Page 9

TISP4xxxH4BJ Overvoltage Protector Series AC Power Testing The protector can withstand currents applied for times not exceeding those shown in Figure 8. Currents that exceed these times must be terminated or reduced to avoid protector failure. Fuses, PTC (Positive Temperature ...

Page 10

TISP4xxxH4BJ Overvoltage Protector Series Typical Circuits RING FUSE TISP4350H4 TIP Figure 14. Modem Inter-wire Protection OVER- RING/TEST CURRENT PROTECTION PROTECTION TIP WIRE R1a Th1 R1b RING WIRE NOVEMBER 1997 - REVISED JANUARY 2007 Specifications are subject to change without notice. ...

Page 11

TISP4xxxH4BJ Overvoltage Protector Series Recommended Printed Wiring Footprint SMB Pad Size Device Symbolization Code Devices will be coded as below. As the device parameters are symmetrical, terminal 1 is not identified. Carrier Information Devices are shipped in one of the ...

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