CRCW12060000Z0EAHP Vishay, CRCW12060000Z0EAHP Datasheet - Page 5

• Manufacturer Part Number: CRCW12060000Z0EAHP
• Description: RES 0.0 OHM .5W 1206 SMD
• Manufacturer: Vishay
• Series: CRCW-HPr

Specifications of CRCW12060000Z0EAHP

• Resistance (ohms): 0.0
• Power (watts): 0.5W, 1/2W
• Composition: Thick Film
• Features: Pulse Withstanding
• Tolerance: Jumper
• Size / Dimension: 0.122" L x 0.063" W (3.10mm x 1.60mm)
• Height: 0.020" (0.50mm)
• Lead Style: Surface Mount (SMD - SMT)
• Package / Case: 1206 (3216 Metric)
• Resistance In Ohms: 0.0
• Case: 1206 (3216 metric)
• Resistance: 0ohm
• Power Rating: 500mW
• Voltage Rating: 200V
• Resistor Element Material: Thick Film
• Resistor Case Style: 1206
• No. Of Pins: 2
• Operating Temperature Range: -55°C To +155°C
• Termination Style: SMD/SMT
• Dimensions: 1.6 mm W x 3.1 mm L x 0.5 mm H
• Product: Thick Film Resistors Zero-Ohm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Temperature Coefficient: -
• Lead Free Status / Rohs Status: Details
• Other names: 541-0.0UB; 541-0.0UBTR

CRCW-HP e3
Vishay Draloric
All tests are carried out in accordance with the following specifications:
• EN 60115-1, generic specification
• EN 140400, sectional specification
• EN 140401-802, detail specification
• IEC 60068-2, environmental test procedures
Packaging of components is done in paper or blister tapes according to IEC 60286-3.
www.vishay.com
174
CLAUSE
60115-1
TEST PROCEDURES AND REQUIREMENTS
4.5
4.7
4.13
4.17.2
4.8.4.2
4.32
4.33
4.19
4.23
4.23.2
4.23.3
4.23.4
4.23.5
4.23.6
4.23.7
4.25.1
4.18.2
4.35
4.24
4.25.3
4.40
4.29
4.30
4.22
4.37
4.27
EN
METHOD
78 (Cab)
60068-2
21 (U
21 (U
45 (XA)
45 (XA)
58 (Td)
14 (Na)
30 (Db)
30 (Db)
58 (Td)
13 (M)
2 (Ba)
1 (Aa)
TEST
6 (Fc)
IEC
-
-
-
-
-
-
-
-
-
-
-
-
U3
U1
)
)
Single pulse high voltage overload,
Vibration, endurance by sweeping
Flammability, needle flame test
Component solvent resistance
Solvent resistance of marking
Rapid change of temperature
Resistance to soldering heat
upper category temperature
Periodic electric overload
Damp heat, steady state
Temperature coefficient
Electrostatic discharge
(human body model)
Endurance at 70 °C
Short time overload
Substrate bending
Damp heat, cyclic
Damp heat, cyclic
Shear (adhesion)
Low air pressure
Voltage proof
Endurance at
10 µs/700 µs
Solderability
Resistance
Pulse Proof, High Power Thick Film Chip Resistors
D.C. load
Dry heat
TEST
cold
-
For technical questions, contact:
Solder bath method; (260 ± 5) °C; (10 ± 1) s
non-activated flux; (235 ± 5) °C; (2 ± 0.2) s
non-activated flux; (245 ± 5) °C; (3 ± 0.3) s
discharges; ESD voltage according to size
Stability for product types:
IEC 61340-3-1; 3 positive and 3 negative
≤ 2 × U
Solder bath method; Sn96.5Ag3Cu0.5;
f = 10 Hz to 2000 Hz; x, y, z ≤ 1.5 mm;
0.1 s “ON”; 2.5 s “OFF”; 1000 cycles
30 min. at - 55 °C; 30 min at 125 °C
(40 ± 2) °C; (93 ± 3) % RH; 56 days
Isopropyl alcohol; 50 °C; method 1;
(20/- 55/20) °C and (20/125/20) °C
Isopropyl alcohol; 50 °C; method 2
A ≤ 200 m/s
U
Solder bath method; Sn60Pb40;
Û
55 °C; ≥ 90 % RH; 24 h; 1 cycle
55 °C; ≥ 90 % RH; 24 h; 5 cycle
=
=
RR 1608 and smaller: 9 N
RR 2012 and larger: 45 N
max.
1 kPa; (25 ± 10) °C; 1 h
U
10 x
IEC 60695-15-5; 10 s
Depth 2 mm; 3 times
U
15 x P
U = 1.4 x U
1.5 h on; 0.5 h off;
; duration: According to style
=
U
=
155 °C; 1000 h
[e-mail]
PROCEDURE
70 °C; 1000 h
70 °C; 8000 h
125 °C; 16 h
1000 cycles
- 55 °C; 2 h
toothbrush
2.5 x
=
P
2
10 pulses
5 cycles
P
; 10 sweeps per axis
70
70
70
P
-
-
x R
x R
x R
70
ins
P
x R
; 60 s
≤
70
≤
≤
U
CRCW-HP e3
2 x U
2 x U
x R
max.
max.
max.
STABILITY CLASS 2 OR BETTER
REQUIREMENTS PERMISSIBLE
Good tinning (≥ 95 % covered)
Good tinning (≥ 95 % covered)
no open circuit in bent position
± 100 ppm/K, ± 200 ppm/K
± (0.25 % R + 0.05 Ω)
No burning after 30 s
± (0.5 % R + 0.05 Ω)
± (0.5 % R + 0.05 Ω)
± (0.5 % R + 0.05 Ω)
± (0.5 % R + 0.05 Ω)
No visible damage,
± (1 % R + 0.05 Ω)
± (1 % R + 0.05 Ω)
± (1 % R + 0.05 Ω)
± (1 % R + 0.05 Ω)
± (1 % R + 0.05 Ω)
No visible damage
No visible damage
no visible damage
no visible damage
no visible damage
± (2 % R + 0.1 Ω)
± (4 % R + 0.1 Ω)
± (2 % R + 0.1 Ω)
± (2 % R + 0.1 Ω)
Marking legible,
Document Number: 20043
CHANGE (ΔR)
± 1 %, ± 5 %
1 Ω to 1 MΩ
Revision: 08-Dec-10
-