SG-210SDB 48.0000ML3 Epson Toyocom Corporation, SG-210SDB 48.0000ML3 Datasheet

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SG-210SDB 48.0000ML3

Manufacturer Part Number
SG-210SDB 48.0000ML3
Description
OSCILLATOR 48.0000 MHZ 2.5V SMD
Manufacturer
Epson Toyocom Corporation
Series
SG210r
Type
Standardr

Specifications of SG-210SDB 48.0000ML3

Featured Product
SG-210 Series Crystal Oscillators
Supply Voltage
2.5V
Frequency
48MHz
Frequency Stability
±50ppm
Operating Temperature
-40°C ~ 85°C
Current - Supply (max)
2.4mA
Mounting Type
Surface Mount
Size / Dimension
0.098" L x 0.079" W (2.50mm x 2.00mm)
Height
0.031" (0.80mm)
Package / Case
4-SMD, No Lead (DFN, LCC)
Supply Current
2.4mA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SER3706TR
Output frequency range
Supply voltage
Temperature
Frequency tolerance
Current consumption
Stand-by current
Symmetry
High output voltage
Low output voltage
Output load condition
Output enable /
Rise time and Fall time
Start-up time
Frequency aging
range
(CMOS)
disable input voltage
CRYSTAL OSCILLATOR
SPXO
SG - 210 S*B
•Frequency range
•Supply voltage
•Current consumption : 0.9 mA Typ.
•Function
•External dimensions : 2.5 × 2.0 × 0.8 t (mm) Typ.
•Operation temperature : +105 °C / +125 °C
Specifications (characteristics)
External dimensions
Note.
ST
ST
Crystal oscillator
#4
#1
pin = HIGH or "open" : Specified frequency output.
pin = LOW : Output is high impedance, oscillation stops.
27.00B
Item
2.5±0.15
Storage
Operating
temperature
B631A
temperature
#3
#2
: 2 MHz to 60 MHz
: 1.5 V Typ. / 1.8 V Typ. / 2.5 V Typ. / 3.3 V Typ.
: Standby(
L_CMOS
Symbol
f_aging
T_use
(SEB 1.8 V No load condition 48 MHz)
T_stg
I_std
SYM
f_tol
t_str
V
V
t
V
V
I
V
r
CC
f
/
CC
OH
OL
0
IH
IL
t
f
ST
)
45 % to 55 %
40 % to 60 %
SG-210SGB
1.0 mA Max.
1.3 V to 1.7 V
0.3 µA Max.
1.5 V Typ.
-40 °C to +85 °C / -40 °C to +105 °C / -40 °C to +125 °C
5 ns Max.
2 MHz to
32 MHz
#2
#3
Pin map
http://www.epsontoyocom.co.jp
Pin
1
2
3
4
B: ±50 × 10
45 % to 55 % 45 % to 55 %
40 % to 60 % 40 % to 60 %
Connection
1.6 mA Max.
SG-210SEB
L:±50 × 10
1.6 V to 2.2 V
2.0 mA Max
0.5 µA Max.
1.6 µA Max.
0.9
1.8 V Typ.
4 ns Max.
GND
OUT
±3 × 10
V
ST
-40 °C to +125 °C
CC
10 % V
20 % V
90 % V
80 % V
Specifications
F: ±20 × 10
Z:±100 × 10
15 pF Max.
0.8
Y:±50 × 10
3 ms Max.
-6
-6
-6
, C: ±100 × 10
,M:±100 × 10
(Unit:mm)
#4
/ year Max.
2 MHz to 60 MHz
CC
CC
CC
CC
#1
40 % to 60 %
Actual size
SG-210SDB
2.4 mA Max.
3.0 mA Max.
2.2 V to 3.0 V
1.0 µA Max.
2.4 µA Max.
Max.
Max.
2.5 V Typ.
Min.
Min.
7 ns Max
-6
-6
-6
,W:±100 × 10
,X:±150 × 10
3 ns Max.
-6
-
6
45 % to 55 %
3.0 mA Max. No load condition
4.0 mA Max. No load condition +105 °C,+125 °C
SG-210SCB
2.7 V to 3.6 V
1.0 µA Max.
3.0 µA Max.
Footprint (Recommended)
3.3 V Typ.
-6
-6
To maintain stable operation, provide by-pass capacitor with
more than 0.1 μF at a location as near as possible to the power
source terminal of the crystal products (between V
#1
#4
Store as bare product after unpacking
-10 °C to +60 °C,
V
-20 °C to +70 °C
-40 °C to +85 °C
-40 °C to +105 °C
-40 °C to +125 °C
16 MHz<
32 MHz<
+105 °C,+125 °C
I
I
+85 ° C
+105 ° C,+125 ° C
t=0 at 90 % V
+25 °C, First year,
V
ST
ST
ST
OH
OL
2 MHz≤
CC
CC
(ex. 0.01 µF)
= 1 mA
=-1 mA
=GND
=GND +105 °C,+125 °C
terminal
Product Number (please contact us)
Q33210Bx0xxxx00
=1.5 V,1.8 V, 2.5 V, 3.3 V
±10%, except reflow drift.
C
f
f
f
0
0
0
≤16 MHz
≤32 MHz
≤60 MHz
Epson Toyocom
1.7
CC
(+105 °C,+125 °C : 5 ms Max.)
Remarks
f
0
Resist
20 % V
level,L_CMOS=15 pF
1.1
≤ 32 MHz,
50 % V
L_CMOS ≤ 15 pF
CC
#2
#3
to 80 % V
CC
- GND).
CC
(Unit:mm)
level
CC

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