SG-210SCD 62.5000ML3 Epson Toyocom Corporation, SG-210SCD 62.5000ML3 Datasheet

SG-210SCD 62.5000ML3

Manufacturer Part Number

SG-210SCD 62.5000ML3

Description

OSCILLATOR 62.5000 MHZ 3.3V SMD

Manufacturer

Epson Toyocom Corporation

Series

SG210r

Type

Standardr

Datasheets

1.SG-210SED_50.0000ML3.pdf (1 pages)

2.SG-210SED_50.0000ML3.pdf (1 pages)

Specifications of SG-210SCD 62.5000ML3

Featured Product

SG-210 Series Crystal Oscillators

Supply Voltage

3.3V

Frequency

62.5MHz

Frequency Stability

±50ppm

Operating Temperature

-40°C ~ 85°C

Current - Supply (max)

8mA

Mounting Type

Surface Mount

Size / Dimension

0.098" L x 0.079" W (2.50mm x 2.00mm)

Height

0.031" (0.80mm)

Package / Case

4-SMD, No Lead (DFN, LCC)

Supply Current

8mA

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

SER3710TR

Current page: 1 of 1
Download datasheet (191Kb)

Output frequency range

Supply voltage

Temperature

Frequency tolerance

Current consumption

Stand-by current

Symmetry

High output voltage

Low output voltage

Output load condition

Output enable /

Rise time / Fall time

Start-up time

Jitter *1

Phase Jitter

Frequency aging

range

(CMOS)

disable input voltage

CRYSTAL OSCILLATOR

Low Profile / LOW-JITTER SPXO

SG - 210 S*D

•Frequency range

•Supply voltage

•Current consumption : 7.0 mA Max.

•Function

•External dimensions : 2.5 × 2.0 × 0.8 t (mm) Typ.

Based on DTS-2075 Digital timing system made from WAVECREST with jitter analysis software VISI6.

Specifications (characteristics)

External dimensions

Note.

Crystal oscillator

pin = HIGH or "open" : Specified frequency output.

pin = LOW : Output is high impedance, oscillation stops.

50.00B

Item

B631A

2.5±0.15

Storage

Operating

temperature

: 50.000 MHz to 80.000 MHz

: 1.8 V Typ. / 2.5 V Typ. / 3.3 V Typ.

: Standby(

(SDD 2.5 V No load condition 80 MHz)

L_CMOS

Symbol

f_aging

T_use

T_stg

I_std

SYM

f_tol

RMS

str

)

SG-210SED

6.0 mA Max.

1.6 V to 2.2 V

1.8 V Typ.

Pin map

http://www.epsontoyocom.co.jp

B: ±50 × 10

L: ±50 × 10

50.000 MHz to 80.000 MHz

±10 × 10

Connection

0.9

±3 × 10

GND

OUT

-40 °C to +125 °C

-40 °C to +85 °C

30 % V

70 % V

Specifications

45 % to 55 %

10.0 µA Max.

1.0 ps Max.

30 pF Max.

0.5 ps Typ.

3.0 ps Typ.

SG-210SDD

7.0 mA Max.

0.4 V Max.

2 ms Max.

25 ps Typ.

2.2 V to 3.0 V

4 ns Max.

-6

0.8

2.5 V Typ.

/ 10 years Max.

-0.4 V Min.

-6

(Unit:mm)

, M: ±100 × 10

/ year Max..

, C: ±100 × 10

Actual size

Max.

Min.

-6

SG-210SCD

8.0 mA Max.

2.7 V to 3.6 V

Footprint (Recommended)

3.3 V Typ.

To maintain stable operation, provide by-pass capacitor with

more than 0.1 μF at a location as near as possible to the power

source terminal of the crystal products (between V

Store as bare product after unpacking

-20 °C to +70 °C

-40 °C to +85 °C

No load condition

50 % V

20 % V

L_CMOS ≤ 30 pF

t=0 at 90 % V

Deterministic Jitter

Random Jitter

Peak to Peak

Offset frequency:

+25 °C, First year,

+25 °C, 10 years,

(ex. 0.01 µF)

Product Number (please contact us)

X1G0029x1xxxx00

12 kHz to 20 MHz

= 8 mA(SCD,SDD), 4 mA(SED)

=-8 mA(SCD,SDD), -4 mA(SED)

=GND

terminal

= 1.8 V, 2.5 V, 3.3 V

Epson Toyocom

1.7

level,L_CMOS ≤ 30 pF

to 80 % V

Remarks

Resist

1.1

L_CMOS ≤ 15 pF

level,

- GND).

(Unit:mm)

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