SI4913DY-T1-GE3 Vishay, SI4913DY-T1-GE3 Datasheet

no-image

SI4913DY-T1-GE3

Manufacturer Part Number
SI4913DY-T1-GE3
Description
MOSFET P-CH D-S 20V 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI4913DY-T1-GE3

Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
15 mOhm @ 9.4A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
7.1A
Vgs(th) (max) @ Id
1V @ 500µA
Gate Charge (qg) @ Vgs
65nC @ 4.5V
Power - Max
1.1W
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Transistor Polarity
P Channel
Continuous Drain Current Id
9.4A
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
24mohm
Rds(on) Test Voltage Vgs
8V
Threshold Voltage Vgs Typ
-1V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI4913DY-T1-GE3TR
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 71997
S09-0870-Rev. D, 18-May-09
Ordering Information:
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
V
DS
G
G
- 20
S
S
1
1
2
2
(V)
1
2
3
4
Top View
SO-8
Si4913DY -T1-E3
Si4913DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
0.015 at V
0.019 at V
0.024 at V
R
DS(on)
J
a
8
7
6
5
= 150 °C)
a
Dual P-Channel 20-V (D-S) MOSFET
GS
GS
GS
= - 4.5 V
= - 2.5 V
= - 1.8 V
D
D
D
D
(Ω)
(Lead (Pb)-free)
1
1
2
2
a
a
A
= 25 °C, unless otherwise noted
I
Steady State
Steady State
D
- 9.4
- 8.4
- 7.5
T
T
T
T
(A)
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Compliant to RoHS Directive 2002/95/EC
• Load Switching
Symbol
Symbol
T
R
R
Definition
J
V
V
I
P
, T
I
DM
thJA
thJF
I
DS
GS
D
S
G
D
stg
1
P-Channel MOSFET
®
S
D
Power MOSFET
1
1
Typical
10 s
- 9.4
- 7.5
- 1.7
2.0
1.3
45
85
26
- 55 to 150
- 20
- 30
± 8
Steady State
Maximum
G
- 7.1
- 5.7
- 0.9
62.5
110
1.1
0.7
2
35
Vishay Siliconix
P-Channel MOSFET
Si4913DY
www.vishay.com
S
D
2
2
°C/W
Unit
Unit
°C
W
V
A
1

Related parts for SI4913DY-T1-GE3

SI4913DY-T1-GE3 Summary of contents

Page 1

... Top View Ordering Information: Si4913DY -T1-E3 (Lead (Pb)-free) Si4913DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si4913DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...

Page 3

... V - Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 71997 S09-0870-Rev. D, 18-May °C J 0.8 1.0 1.2 1.4 Si4913DY Vishay Siliconix 6000 5000 C iss 4000 3000 2000 C oss 1000 C rss Drain-to-Source Voltage (V) DS Capacitance 1.4 1.2 1 ...

Page 4

... Si4913DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 0 0.2 0.1 0.0 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 = 500 µA 75 100 125 150 100 Limited DS(on D(on) 1 Limited ° ...

Page 5

... Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71997. Document Number: 71997 S09-0870-Rev. D, 18-May- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4913DY Vishay Siliconix - www.vishay.com 10 5 ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

Related keywords