MOSFET N-CH 500V TO-220FP

FDPF12N50NZ

Manufacturer Part NumberFDPF12N50NZ
DescriptionMOSFET N-CH 500V TO-220FP
ManufacturerFairchild Semiconductor
SeriesUniFET-II™
FDPF12N50NZ datasheet
 


Specifications of FDPF12N50NZ

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs520 mOhm @ 5.75A, 10VDrain To Source Voltage (vdss)500V
Current - Continuous Drain (id) @ 25° C11.5AVgs(th) (max) @ Id5V @ 250µA
Gate Charge (qg) @ Vgs30nC @ 10VInput Capacitance (ciss) @ Vds1235pF @ 25V
Power - Max42WMounting TypeThrough Hole
Package / Case*Lead Free Status / RoHS StatusLead free / RoHS Compliant
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FDP12N50NZ / FDPF12N50NZ
N-Channel MOSFET
500V, 11.5A, 0.52Ω
Features
• R
= 0.46Ω ( Typ. ) @ V
= 10V, I
DS(on)
GS
• Low gate charge ( Typ. 23nC )
• Low C
( Typ. 14pF )
rss
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
TO-220
G D S
FDP Series
MOSFET Maximum Ratings
Symbol
V
Drain to Source Voltage
DSS
V
Gate to Source Voltage
GSS
I
Drain Current
D
I
Drain Current
DM
E
Single Pulsed Avalanche Energy
AS
I
Avalanche Current
AR
E
Repetitive Avalanche Energy
AR
dv/dt
Peak Diode Recovery dv/dt
P
Power Dissipation
D
T
, T
Operating and Storage Temperature Range
J
STG
Maximum Lead Temperature for Soldering Purpose,
T
L
1/8” from Case for 5 Seconds
*Dran current limited by maximum junction temperature
Thermal Characteristics
Symbol
R
Thermal Resistance, Junction to Case
θJC
R
Thermal Resistance, Case to Sink Typ
θCS
R
Thermal Resistance, Junction to Ambient
θJA
©2010 Fairchild Semiconductor Corporation
FDP12N50NZ / FDPF12N50NZ Rev. A
Description
= 5.75A
These N-Channel enhancement mode power field effect
D
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
TO-220F
G
S
D
FDPF Series
(potted)
o
T
= 25
C unless otherwise noted
*
C
Parameter
o
- Continuous (T
= 25
C)
C
o
- Continuous (T
= 100
C)
C
- Pulsed
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
o
(T
= 25
C)
C
o
- Derate above 25
C
Parameter
1
October 2010
UniFET-II
switching
D
D
G
G
S
S
FDP12N50NZ
FDPF12N50NZ
Units
500
V
±25
V
11.5
11.5*
A
6.9
6.9*
46
46*
A
560
mJ
11.5
A
17
mJ
4.5
V/ns
170
42
W
o
1.37
0.33
W/
C
o
-55 to +150
C
o
300
C
Units
FDP12N50NZ
FDPF12N50NZ
0.73
3.0
o
0.5
-
C/W
62.5
62.5
www.fairchildsemi.com
TM

FDPF12N50NZ Summary of contents

  • Page 1

    ... R Thermal Resistance, Case to Sink Typ θCS R Thermal Resistance, Junction to Ambient θJA ©2010 Fairchild Semiconductor Corporation FDP12N50NZ / FDPF12N50NZ Rev. A Description = 5.75A These N-Channel enhancement mode power field effect D transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to ...

  • Page 2

    ... Repetitive Rating: Pulse width limited by maximum junction temperature 8.5mH 11.5A 50V 25Ω, Starting ≤ 11.5A, di/dt ≤ 200A/μs, V ≤ Starting DSS 4. Essentially Independent of Operating Temperature Typical Characteristics FDP12N50NZ / FDPF12N50NZ Rev. A Package Reel Size TO-220 - TO-220F - unless otherwise noted C Test Conditions I = 250μ 0V, T ...

  • Page 3

    ... V = 20V GS 0 Drain Current [A] D Figure 5. Capacitance Characteristics 2500 C iss = oss = rss = C gd 2000 1500 1000 500 0 0 Drain-Source Voltage [V] DS FDP12N50NZ / FDPF12N50NZ Rev. A Figure 2. Transfer Characteristics *Notes: μ 1. 250 s Pulse Test 0 Figure 4. Body Diode Forward Voltage 100 10 o *Note ...

  • Page 4

    ... 150 J 3. Single Pulse 0. Drain-Source Voltage [V] DS Figure 11. Maximum Drain Current vs. Case Temperature Case Temperature C FDP12N50NZ / FDPF12N50NZ Rev. A (Continued) Figure 8. On-Resistance Variation *Notes 250uA D 50 100 150 Figure 10.Maximum Safe Operating Area μ μ 100 s 1ms 10ms 100 100 ...

  • Page 5

    ... Typical Performance Characteristics Figure 12. Transient Thermal Response Curve - FDP12N50NZ 5 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single pulse 0.001 -5 10 Figure 13. Transient Thermal Response Curve - FDPF12N50NZ 5 D=0.5 1 0.2 0.1 0. 0.02 0. FDP12N50NZ / FDPF12N50NZ Rev. A (Continued Notes : Duty Factor, D Rectangular Pulse Duration [sec] *Notes: 1 ...

  • Page 6

    ... FDP12N50NZ / FDPF12N50NZ Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 6 www.fairchildsemi.com ...

  • Page 7

    ... Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) FDP12N50NZ / FDPF12N50NZ Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT GS GS • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period ...

  • Page 8

    ... Mechanical Dimensions FDP12N50NZ / FDPF12N50NZ Rev. A TO-220 8 www.fairchildsemi.com ...

  • Page 9

    ... Package Dimensions * Front/Back Side Isolation Voltage : 2500V FDP12N50NZ / FDPF12N50NZ Rev. A (Continued) TO-220F 9 Dimensions in Millimeters www.fairchildsemi.com ...

  • Page 10

    ... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDP12N50NZ / FDPF12N50NZ Rev. A F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource PowerXS™ Green FPS™ Programmable Active Droop™ ...