FDPF12N50NZ Fairchild Semiconductor, FDPF12N50NZ Datasheet - Page 2

• Manufacturer Part Number: FDPF12N50NZ
• Description: MOSFET N-CH 500V TO-220FP
• Manufacturer: Fairchild Semiconductor
• Series: UniFET-II™r

Specifications of FDPF12N50NZ

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 520 mOhm @ 5.75A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 11.5A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 1235pF @ 25V
• Power - Max: 42W
• Mounting Type: Through Hole
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP12N50NZ / FDPF12N50NZ Rev. A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 8.5mH, I
3. I
4. Essentially Independent of Operating Temperature Typical Characteristics
Package Marking and Ordering Information
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
BV
ΔBV
I
I
V
R
g
C
C
C
Q
Q
Q
t
t
t
t
I
I
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
ΔT
FS
GS(th)
SD
SD
DS(on)
iss
oss
rss
g
gs
gd
rr
Device Marking
DSS
Symbol
FDPF12N50NZ
≤ 11.5A, di/dt ≤ 200A/μs, V
J
FDP12N50NZ
DSS
AS
= 11.5A, V
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
DD
= 50V, R
DD
≤ BV
FDPF12N50NZ
FDP12N50NZ
G
DSS
Device
= 25Ω, Starting T
Parameter
, Starting T
T
J
= 25°C
C
J
= 25
= 25°C
o
C unless otherwise noted
Package
TO-220F
TO-220
I
I
V
V
V
V
V
dI
V
V
V
V
f = 1MHz
V
V
V
R
D
D
DS
DS
GS
DD
GS
GS
GS
GS
DS
DS
DS
GS
G
F
= 250μA, V
= 250μA, Referenced to 25
/dt = 100A/μs
= 25Ω
= 500V, V
= 400V, T
= 0V, I
= ±25V, V
= 20V, I
= 25V, V
= 400V, I
= 10V
= 250V, I
= 0V, I
= V
= 10V, I
DS
Test Conditions
, I
SD
2
SD
D
Reel Size
D
D
GS
GS
D
D
= 11.5A
= 5.75A
= 11.5A
GS
C
= 5.75A
DS
= 250μA
= 11.5A
= 11.5A
= 125
= 0V
= 0V, T
-
-
= 0V
= 0V
o
C
J
= 25
o
o
C
C
Tape Width
-
-
Min.
500
3.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
0.46
315
945
155
2.0
0.5
5.5
9.6
14
23
12
20
50
60
45
-
-
-
-
-
-
-
-
Quantity
www.fairchildsemi.com
Max.
1235
0.52
11.5
±10
205
110
130
100
1.4
5.0
10
20
30
46
50
1
50
50
-
-
-
-
-
-
-
Units
V/
nC
nC
nC
μA
μA
pF
pF
pF
ns
ns
ns
ns
ns
μC
V
Ω
A
A
V
V
S
o
C